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参数资料
| 型号： | FCPF380N60 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V TO-220-3 |
| 标准包装： | 50 |
| 系列： | superfetII™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 10.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 380 毫欧 @ 5A，10V |
| Id 时的 Vgs(th)（最大）： | 3.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 40nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1665pF @ 25V |
| 功率 - 最大： | 31W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 整包 |
| 供应商设备封装： | TO-220F |
| 包装： | 管件 |
| 其它名称： | FCPF380N60-ND |
November 2013
FCP380N60 / FCPF380N60
N-Channel SuperFET ? II MOSFET
600 V, 10.2 A, 380 m Ω
Features
? 650 V @ T J = 150°C
? Typ. R DS(on) = 330 m Ω
? Ultra Low Gate Charge (Typ. Q g = 30 nC)
? Low Effective Output Capacitance (Typ. C oss(eff.) = 95 pF)
? 100% Avalanche Tested
? RoHS Compliant
Applications
? LCD / LED / PDP TV Lighting
Description
SuperFET ? II MOSFET is Fairchild Semiconductor ’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching
performance, dv/dt rate and higher avalanche energy.
Consequently, SuperFET II MOSFET is very suitable for the
switching power applications such as PFC, server/telecom
power, FPD TV power, ATX power and industrial power
applications.
? Solar Inverter
? AC-DC Power Supply
D
GD
D
S
TO-220
G
S
TO-220F
G
Absolute Maximum Ratings T C = 25 o C unless otherwise noted.
S
Symbol
V DSS
Drain to Source Voltage
Parameter
FCP380N60 FCPF380N60
600
Unit
V
V GSS
I D
Gate to Source Voltage
Drain Current
- DC
- AC
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
(f > 1 Hz)
10.2
6.4
±20
±30
10.2*
6.4*
V
A
I DM
E AS
I AR
E AR
dv/dt
P D
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
- Pulsed
(T C = 25 o C)
- Derate Above 25 o C
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
30.6
106
0.85
211.6
2.3
1.06
100
20
30.6*
31
0.25
A
mJ
A
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +150
300
o
o
C
C
*Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FCP380N60
1.18
62.5
FCPF380N60
4
62.5
Unit
o C/W
?2012 Fairchild Semiconductor Corporation
FCP380N60 / FCPF380N60 Rev. C6
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FCPF400N60 | MOSFET N-CH 600V TO-220-3 |
| FCPF7N60NT | MOSFET N-CH 600V 6.8A TO-220F |
| FCPF7N60T | MOSFET N-CH 600V 7A TO-220F |
| FCTN-RLY4-418-MOM | MODULE MOM RECEIVER 418MHZ |
| FCTN-WALL-433 | MODULE AC SWITCH RECEIVER 433MHZ |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FCPF380N60_F152 | 制造商:Fairchild Semiconductor Corporation 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:MSOFET N-CH 600V 10.2A TO-220F 制造商:Fairchild Semiconductor Corporation 功能描述:RAIL / SuperFET2, 380mohm, TO220F, SG |
| FCPF380N60E | 功能描述:MOSFET 600V N-CHAN MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FCPF380N60E_F152 | 制造商:Fairchild Semiconductor Corporation 功能描述:380MOHM, SLOW VER, TO220F S/G 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-CH 600V TO-220-3 制造商:Fairchild Semiconductor Corporation 功能描述:RAIL / 380mohm, Slow ver, TO220F S/G |
| FCPF400N60 | 功能描述:MOSFET 600V N-CHAN MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FCPF600N60Z | 功能描述:MOSFET 600V N-Channel MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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