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参数资料
| 型号： | FCPF380N60 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V TO-220-3 |
| 标准包装： | 50 |
| 系列： | superfetII™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 10.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 380 毫欧 @ 5A，10V |
| Id 时的 Vgs(th)（最大）： | 3.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 40nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1665pF @ 25V |
| 功率 - 最大： | 31W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 整包 |
| 供应商设备封装： | TO-220F |
| 包装： | 管件 |
| 其它名称： | FCPF380N60-ND |
Package Marking and Ordering Information
Part Number
FCP380N60
FCPF380N60
Top Mark
FCP380N60
FCPF380N60
Package
TO-220
TO-220F
Packing Method
Tube
Tube
Reel Size
N/A
N/A
Tape Width
N/A
N/A
Quantity
50 units
50 units
Electrical Characteristics T C = 25 o C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV DSS
Δ BV DSS
/ Δ T J
BV DS
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain to Source Avalanche Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V GS = 0 V, I D = 10 mA, T J = 25 ° C
V GS = 0 V, I D = 10 mA, T J = 150 ° C
I D = 10 mA, Referenced to 25 o C
V GS = 0 V, I D = 10 A
V DS = 480 V, V GS = 0 V
V DS = 480 V, T C = 125 o C
V GS = ±20 V, V DS = 0 V
600
-
-
-
-
-
-
-
650
0.6
700
-
-
-
-
-
-
-
1
10
±100
V
V/ o C
V
μ A
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 μ A
V GS = 10 V, I D = 5 A
V DS = 20 V, I D = 5 A
2.5
-
-
-
0.33
11
3.5
0.38
-
V
Ω
S
Dynamic Characteristics
C iss
C oss
C rss
C oss
C oss(eff.)
Q g(tot)
Q gs
Q gd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
V DS = 25 V, V GS = 0 V,
f = 1 MHz
V DS = 380 V, V GS = 0 V, f = 1 MHz
V DS = 0 V to 480 V, V GS = 0V
V DS = 380 V, I D = 5 A,
V GS = 10 V
(Note 4)
f = 1 MHz
-
-
-
-
-
-
-
-
-
1250
905
45
23
95
30
5
10
1
1665
1205
60
-
-
40
-
-
-
pF
pF
pF
pF
pF
nC
nC
nC
Ω
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = 380 V, I D = 5 A,
V GS = 10 V, R G = 4.7 Ω
(Note 4)
-
-
-
-
14
7
45
6
38
24
100
22
ns
ns
ns
ns
Drain-Source Diode Characteristics
I S
I SM
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
10.2
30.6
A
A
V SD
t rr
Q rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I SD = 5 A
V GS = 0 V, I SD = 5 A,
dI F /dt = 100 A/ μ s
-
-
-
-
240
2.7
1.2
-
-
V
ns
μ C
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. I AS = 2.3 A, V DD = 50 V, R G = 25 Ω , starting T J = 25 ° C.
3. I SD ≤ 5.1 A, di/dt ≤ 200 A/ μ s, V DD ≤ BV DSS , starting T J = 25 ° C.
4. Essentially independent of operating temperature typical characteristics.
?2012 Fairchild Semiconductor Corporation
FCP380N60 / FCPF380N60 Rev. C6
2
www.fairchildsemi.com
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