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参数资料
| 型号： | FDB050AN06A0 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 4/13页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 80A TO-263AB |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 80A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5 毫欧 @ 80A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 80nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3900pF @ 25V |
| 功率 - 最大： | 245W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263AB |
| 包装： | 标准包装 |
| 其它名称： | FDB050AN06A0DKR |
Typical Characteristics T C = 25°C unless otherwise noted
1000
500
If R = 0
100
10 μ s
100 μ s
100
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
OPERATION IN THIS
1ms
STARTING T J = 25 o C
10
AREA MAY BE
LIMITED BY r DS(ON)
10ms
10
1
0.1
SINGLE PULSE
T J = MAX RATED
T C = 25 o C
DC
1
STARTING T J = 150 o C
1
10
100
0.01
0.1
1
10
100
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
t AV , TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
160
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
160
V GS = 7V
120
80
V DD = 15V
T J = 175 o C
120
80
V GS = 10V
V GS = 6V
40
T J = 25 o C
T J = -55 o C
40
V GS = 5V
T C = 25 o C
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
0
4.0
4.5
5.0
5.5
6.0
0
0
0.5
1.0
1.5
8
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
2.0
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V GS = 6V
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
7
1.5
6
1.0
5
V GS = 10V
4
0
20
40
I D , DRAIN CURRENT (A)
6 0
80
0.5
-80
-40
V GS = 10V, I D =80A
0 40 80 120 160
T J , JUNCTION TEMPERATURE ( o C)
200
Figure 9. Drain to Source On Resistance vs Drain
Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
? 200 3 Fairchild Semiconductor Corporation
FDP050AN06A0 / FDB050AN06A0 Rev. C 2
4
www.fairchildsemi.com
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