参数资料
型号: FDB16AN08A0
厂商: Fairchild Semiconductor
文件页数: 10/11页
文件大小: 0K
描述: MOSFET N-CH 75V 58A TO-263AB
产品培训模块: High Voltage Switches for Power Processing
标准包装: 800
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 75V
电流 - 连续漏极(Id) @ 25° C: 58A
开态Rds(最大)@ Id, Vgs @ 25° C: 16 毫欧 @ 58A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 42nC @ 10V
输入电容 (Ciss) @ Vds: 1857pF @ 25V
功率 - 最大: 135W
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: TO-263AB
包装: 带卷 (TR)
Mechanical Dimensions
TO-220 3L
Figure 21. TO-220, Molded, 3Lead, Jedec Variation AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor ’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-003
Dimension in Millimeters
? 200 2 Fairchild Semiconductor Corporation
FDP16AN08A0 Rev. C2
10
www.fairchildsemi.com
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