参数资料
型号: FDB16AN08A0
厂商: Fairchild Semiconductor
文件页数: 5/11页
文件大小: 0K
描述: MOSFET N-CH 75V 58A TO-263AB
产品培训模块: High Voltage Switches for Power Processing
标准包装: 800
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 75V
电流 - 连续漏极(Id) @ 25° C: 58A
开态Rds(最大)@ Id, Vgs @ 25° C: 16 毫欧 @ 58A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 42nC @ 10V
输入电容 (Ciss) @ Vds: 1857pF @ 25V
功率 - 最大: 135W
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: TO-263AB
包装: 带卷 (TR)
Typical Characteristics T C = 25°C unless otherwise noted
1.4
V GS = V DS , I D = 250 μ A
1.2
I D = 250 μ A
1.2
1.1
1.0
0.8
1.0
0.6
0.4
-80
-40
0 40 80 120
T J , JUNCTION TEMPERATURE ( o C)
160
200
0.9
-80
-40
0 40 80 120
T J , JUNCTION TEMPERATURE ( o C)
160
200
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
3000
1000
C OSS ? C DS + C GD
C RSS = C GD
C ISS = C GS + C GD
10
8
6
4
V DD = 40V
100
50
V GS = 0V, f = 1MHz
2
0
WAVEFORMS IN
DESCENDING ORDER:
I D = 58A
I D = 28A
0.1
1
10
75
0
5
10 15 20
25
30
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 13. Capacitance vs Drain to Source
Voltage
Q g , GATE CHARGE (nC)
Figure 14. Gate Charge Waveforms for Constant
Gate Current
? 200 2 Fairchild Semiconductor Corporation
FDP16AN08A0 Rev. C2
5
www.fairchildsemi.com
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