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参数资料
| 型号： | FDB16AN08A0 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 75V 58A TO-263AB |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 800 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 75V |
| 电流 - 连续漏极(Id) @ 25° C： | 58A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 16 毫欧 @ 58A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 42nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1857pF @ 25V |
| 功率 - 最大： | 135W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263AB |
| 包装： | 带卷 (TR) |
Package Marking and Ordering Information
Device Marking
FDP 16 AN08A0
Device
FDP 16 AN08A0
Package
TO-220
Reel Size
Tube
Tape Width
N/A
Quantity
50 units
Electrical Characteristics T C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
B VDSS
Drain to Source Breakdown Voltage
I D = 250 μ A, V GS = 0V
75
-
-
V
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V DS = 60V
V GS = 0V
V GS = ± 20V
T C = 150 o C
-
-
-
-
-
-
1
250
± 100
μ A
nA
On Characteristics
V GS(TH)
r DS(ON)
Gate to Source Threshold Voltage
Drain to Source On Resistance
V GS = V DS , I D = 250 μ A
I D = 58A, V GS = 10V
I D = 29A, V GS = 6V
I D = 58A, V GS = 10V,
T J = 175 o C
2
-
-
-
-
0.013
0.019
0.032
4
0.016
0.029
0.037
V
?
Dynamic Characteristics
C ISS
C OSS
C RSS
Q g(TOT)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
V DS = 25V, V GS = 0V,
f = 1MHz
V GS = 0V to 10V
-
-
-
1857
288
88
28
-
-
-
42
pF
pF
pF
nC
Q g(TH)
Q gs
Q gs2
Q gd
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V GS = 0V to 2V
V DD = 40V
I D = 58A
I g = 1.0mA
-
-
-
-
3.5
11
7.6
6.4
5
-
-
-
nC
nC
nC
nC
Switching Characteristics (V GS = 10V)
t ON
t d(ON)
t r
t d(OFF)
t f
t OFF
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
V DD = 40V, I D = 58A
V GS = 10V, R GS = 10 ?
-
-
-
-
-
-
-
8
82
28
30
-
135
-
-
-
-
86
ns
ns
ns
ns
ns
ns
Drain-Source Diode Characteristics
V SD
t rr
Q RR
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
I SD = 58A
I SD = 29A
I SD = 58A, dI SD /dt = 100A/ μ s
I SD = 58A, dI SD /dt = 100A/ μ s
-
-
-
-
-
-
-
-
1.25
1.0
35
36
V
V
ns
nC
Notes:
1: Starting T J = 25°C, L = 260 μ H, I AS = 30A.
? 200 2 Fairchild Semiconductor Corporation
FDP16AN08A0 Rev. C2
2
www.fairchildsemi.com
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