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参数资料
| 型号： | FDB5800 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 80A D2PAK |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 80A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 6 毫欧 @ 80A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 135nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 6625pF @ 15V |
| 功率 - 最大： | 242W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D²PAK |
| 包装： | 标准包装 |
| 产品目录页面： | 1606 (CN2011-ZH PDF) |
| 其它名称： | FDB5800DKR |
Package Marking and Ordering Information
Part Number
FDB5800
Top Mark
FDB5800
Package
D 2 -PAK
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
24 mm
Quantity
800 units
= 25 C unless otherwise noted.
Electrical Characteristics T
C
o
Symbol
Parameter
Test Conditions
Min .
Typ .
Max .
Unit
Off Characteristics
B VDSS
I DSS
I GSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = 250 μ A, V GS = 0 V
V DS = 48 V
V GS = 0 V T C = 150 o C
V GS = ± 20 V
60
-
-
-
-
-
-
-
-
1
250
± 100
V
μ A
nA
On Characteristics
V GS(TH)
r DS(ON)
Gate to Source Threshold Voltage
Drain to Source On Resistance
V GS = V DS , I D = 250 μ A
I D = 80 A, V GS = 10 V
I D = 80 A, V GS = 4.5 V
I D = 80 A, V GS = 5 V
I D = 80 A, V GS = 10 V,
T J = 175 o C
1.0
-
-
-
-
-
4.6
5.8
5.5
10
2.5
6.0
7.2
7.0
12.6
V
m ?
Dynamic Characteristics
V GS = 0 V to 1 V
C ISS
C OSS
C RSS
R G
Q g(TOT)
Q g(5)
Q g(TH)
Q gs
Q gs2
Q gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V DS = 15 V, V GS = 0 V,
f = 1 MHz
V GS = 0.5 V, f = 1 MHz
V GS = 0 V to 10 V
V GS = 0 V to 5 V
V DD = 30 V
I D = 80 A
I g = 1.0 mA
-
-
-
-
-
-
-
-
-
-
6625
628
262
1.4
104
55
6.0
18.4
12.5
20.1
-
-
-
-
135
72
-
-
-
-
pF
pF
pF
?
nC
nC
nC
nC
nC
nC
Switching Characteristics (V GS = 5V)
t ON
t d(ON)
t r
t d(OFF)
t f
t OFF
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
V DD = 30 V, I D = 80 A
V GS = 5 V, R GS = 2 ?
-
-
-
-
-
-
-
20.3
22.0
27.1
12.1
-
62.1
-
-
-
-
59.0
ns
ns
ns
ns
ns
ns
Drain-Source Diode Characteristics
V SD
t r
Q SD
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
I SD = 80 A
I SD = 40 A
I SD = 60 A, dI SD /dt = 100 A/ μ s
I SD = 60 A, dI SD /dt = 100 A/ μ s
-
-
-
-
-
-
-
-
1.25
1.0
44
57
V
V
ns
nC
Notes:
1: Starting T J = 25°C, L = 1mH, I AS = 36A, V DD = 54V, V GS = 10V.
2: Pulse width = 100s.
?200 5 Fairchild Semiconductor Corporation
FDB5800 Rev. C2
2
www.fairchildsemi.com
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