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参数资料
| 型号： | FDB8443 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V 120A TO-263AB |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 120A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3 毫欧 @ 80A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 185nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 9310pF @ 25V |
| 功率 - 最大： | 188W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263AB |
| 包装： | 标准包装 |
| 其它名称： | FDB8443DKR |
Package Marking and Ordering Information
Device Marking
FDB8443
Device
FDB8443
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
Electrical Characteristics T C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
B VDSS
Drain to Source Breakdown Voltage
I D = 250 μ A, V GS = 0V
40
-
-
V
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V DS = 32V,
V GS = 0V
V GS = ±20V
T C = 150 o C
-
-
-
-
-
-
1
250
±100
μ A
nA
On Characteristics
V GS(th)
r DS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
V GS = V DS , I D = 250 μ A
I D = 80A, V GS = 10V
I D = 80A, V GS = 10V,
T J = 175 o C
2
-
-
2.8
2.3
4.2
4
3.0
5.5
V
m Ω
Dynamic Characteristics
C iss
C oss
C rss
R G
Q g(TOT)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
V DS = 25V, V GS = 0V,
f = 1MHz
V GS = 0.5V, f = 1MHz
V GS = 0 to 10V
-
-
-
-
-
9310
800
510
0.9
142
-
-
-
-
185
pF
pF
pF
Ω
nC
Q g(TH)
Q gs
Q gs2
Q gd
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller“ Charge
V GS = 0 to 2V
V DD = 20V
I D = 35A
I g = 1mA
-
-
-
-
17.5
36
18.8
32
23
-
-
-
nC
nC
nC
nC
Switching Characteristics (V GS = 10V)
t on
Turn-On Time
-
-
58
ns
t d(on)
t r
t d(off)
t f
t off
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
V DD = 20V, I D = 35A
V GS = 10V, R GS = 2 Ω
-
-
-
-
-
18.4
17.9
55
13.5
-
-
-
-
-
109
ns
ns
ns
ns
ns
Drain-Source Diode Characteristics
V SD
t rr
Q rr
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
I SD = 35A
I SD = 15A
I SD = 35A, dI SD /dt = 100A/ μ s
-
-
-
-
0.8
0.8
42
48
1.25
1.0
55
62
V
ns
nC
Notes:
1: Starting T J = 25 o C, L = 0.26mH, I AS = 64A.
2: Pulse width = 100s.
?2010 Fairchild Semiconductor Corporation
FDB8443 Rev. C1
2
www.fairchildsemi.com
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