参数资料
型号: FDB8453LZ
厂商: Fairchild Semiconductor
文件页数: 1/6页
文件大小: 0K
描述: MOSFET N-CH 40V 16.1A TO-263AB
标准包装: 1
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 40V
电流 - 连续漏极(Id) @ 25° C: 16.1A
开态Rds(最大)@ Id, Vgs @ 25° C: 7 毫欧 @ 17.6A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 66nC @ 10V
输入电容 (Ciss) @ Vds: 3545pF @ 20V
功率 - 最大: 3.1W
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: TO-263AB
包装: 标准包装
产品目录页面: 1606 (CN2011-ZH PDF)
其它名称: FDB8453LZDKR
August 2007
FDB8453LZ
N-Channel PowerTrench ? MOSFET
40V, 50A, 7.0m ?
Features
Max r DS(on) = 7.0m ? at V GS = 10V, I D = 17.6A
Max r DS(on) = 9.0m ? at V GS = 4.5V, I D = 14.9A
HBM ESD protection level of 7.6kV typical (note 4)
Fast Switching
RoHS Compliant
tm
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench ? process that has
been especially tailored to minimize the on-state resistance and
switching loss. G-S zener has been added to enhance ESD
voltage level.
Applications
Inverter
Power Supplies
D
D
G
S
TO-263AB
G
FDB Series
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
S
Symbol
V DS
V GS
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
T C = 25°C
Ratings
40
±20
50
Units
V
V
I D
-Continuous (Silicon limited)
-Continuous
T C = 25°C
T A = 25°C
(Note 1a)
74
16.1
A
-Pulsed
100
E AS
Single Pulse Avalanche Energy
(Note 3)
253
mJ
P D
Power Dissipation
Power Dissipation
T C = 25°C
T A = 25°C
(Note 1a)
66
3.1
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
1.88
40
°C/W
Package Marking and Ordering Information
Device Marking
FDB8453LZ
Device
FDB8453LZ
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
?2007 Fairchild Semiconductor Corporation
FDB8453LZ Rev.C1
1
www.fairchildsemi.com
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