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| 型号： | FDC2512_F095 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 150V 1.4A 6-SSOT |
| 产品变化通告： | Mold Compound Change 08/April/2008 |
| 标准包装： | 3,000 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 150V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 425 毫欧 @ 1.4A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 11nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 344pF @ 75V |
| 功率 - 最大： | 800mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 细型，TSOT-23-6 |
| 供应商设备封装： | 6-SSOT |
| 包装： | 带卷 (TR) |
October 200 9
FDC2512
150V N-Channel PowerTrench ? MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
? 1.4 A, 150 V.
R DS(ON) = 425 m ? @ V GS = 10 V
R DS(ON) = 475 m ? @ V GS = 6 V
switching PWM controllers. It has been optimized for
low gate charge, low R DS(ON) and fast switching speed.
Applications
? DC/DC converter
?
?
?
?
High performance trench technology for extremely
low R DS(ON)
Low gate charge (8nC typ)
High power and current handling capability
Fast switching speed
D
D
S
1
6
2
5
SuperSOT -6
TM
D
D
G
3
4
Absolute Maximum Ratings
T A =25 o C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
150
± 20
Units
V
V
I D
Drain Current
– Continuous
– Pulsed
(Note 1a)
1.4
8
A
E AS
P D
Single Pulse Avalanche Energy
Maximum Power Dissipation
(Note 3 )
(Note 1a)
13.5
1.6
mJ
W
(Note 1b)
0.8
T J , T stg
Operating and Storage Junction Temperature Range
? 55 to +150
° C
Thermal Characteristics
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
° C/W
° C/W
Package Marking and Ordering Information
Device Marking
.252
Device
FDC2512
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
? 200 9 Fairchild Semiconductor Corporation
FDC2512 Rev B 4 (W)
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