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参数资料
| 型号： | FDC5612_F095 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 4.3A 6-SSOT |
| 产品变化通告： | Mold Compound Change 08/April/2008 |
| 标准包装： | 3,000 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 55 毫欧 @ 4.3A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 18nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 650pF @ 25V |
| 功率 - 最大： | 800mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 细型，TSOT-23-6 |
| 供应商设备封装： | 6-SSOT |
| 包装： | 带卷 (TR) |
December 200 4
FDC5612
60V N-Channel PowerTrench ? MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
Features
? 4.3 A, 60 V. R DS(ON) = 0.055 ? @ V GS = 10 V
R DS(ON) = 0.064 ? @ V GS = 6 V
switching PWM controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable R DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power supply
designs with higher overall efficiency.
?
?
?
?
Low gate charge (12.5nC typical).
Fast switching speed.
High performance trench technology for extremely
low R DS(ON) .
SuperSOT TM -6 package: small footprint (72% smaller
than standard SO-8); low profile (1mm thick).
D
S
1
6
D
G
2
5
D
D
SuperSOT TM -6
Absolute Maximum Ratings
T A = 25°C unless otherwise noted
3
4
Symbol
V DSS
V GSS
Drain-Source Voltage
Gate-Source Voltage
Parameter
Ratings
60
± 20
Units
V
V
I D
Drain Current
- Continuous
(Note 1a)
4.3
A
Drain Current
- Pulsed
20
P D
Power Dissipation for Single Operation
(Note 1a)
1.6
W
(Note 1b)
0.8
T J , T stg
Operating and Storage Junction Temperature Range
-55 to +150
° C
Thermal Characteristics
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
° C/W
° C/W
Package Outlines and Ordering Information
Device Marking
.562
Device
FDC5612
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
? 200 4 Fairchild Semiconductor Corporation
FDC5612 Rev. C 2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDC5612NL | 制造商:Fairchild Semiconductor Corporation 功能描述:Trans MOSFET N-CH 60V 4.3A 6-Pin SuperSOT T/R |
| FDC5614 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:60V P-Channel Logic Level PowerTrench MOSFET |
| FDC5614P | 功能描述:MOSFET SSOT-6 P-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDC5614P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SMD SSOT-6 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, P, SMD, SSOT-6 |
| FDC5614P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR |
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