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| 型号： | FDC637BNZ |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 6.2A 6-SSOT |
| 产品变化通告： | Mold Compound Change 08/April/2008 |
| 产品目录绘图： | MOSFET SuperSOT-6 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 6.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 24 毫欧 @ 6.2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 12nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 895pF @ 10V |
| 功率 - 最大： | 800mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 细型，TSOT-23-6 |
| 供应商设备封装： | 6-SSOT |
| 包装： | 标准包装 |
| 产品目录页面： | 1602 (CN2011-ZH PDF) |
| 其它名称： | FDC637BNZDKR |
September 2007
N-Channel 2.5V Specified PowerTrench MOSFET
F DC637BNZ
20V, 6.2A, 24m ?
?
tm
Features
Max r DS(on) = 24m ? at V GS = 4.5V, I D = 6.2A
Max r DS(on) = 32m ? at V GS = 2.5V, I D = 5.2A
Fast switching speed
Low gate charge (8nC typical)
High performance trench technology for extremely low r DS(on)
SuperSOT?–6 package: small footprint (72% smaller than
standard SO-8; low profile (1mm thick)
HBM ESD protection level > 2kV typical (Note 3)
Manufactured using green packaging material
Halide-Free
RoHS Compliant
S
General Description
This N-Channel 2.5V specified MOSFET is produced using
Fairchild Semiconductor ’s advanced PowerTrench ? process
that has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
These devices have been designed to offer exceptional power
dissipation in a very small footprint compared with bigger SO-8
and TSSOP-8 packages.
Applications
DC - DC Conversion
Load switch
Battery Protection
D
D
G
D
D
1
2
6
5
D
D
Pin 1
D
D
G
3
4
S
SuperSOT TM -6
MOSFET Maximum Ratings T A = 25°C unless otherwise noted
Symbol
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
20
±12
Units
V
V
I D
Drain Current
-Continuous
-Pulsed
T A = 25°C
(Note 1a)
6.2
20
A
P D
Power Dissipation
Power Dissipation
T A = 25°C
T A = 25°C
(Note 1a)
(Note 1b)
1.6
0.8
W
T J , T STG
Operating and Storage Junction Temperature Range
–55 to +150
° C
Thermal Characteristics
R θ JA
R θ JA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1a)
(Note 1b)
78
156
°C/W
Package Marking and Ordering Information
Device Marking
.637Z
Device
FDC637BNZ
Package
SSOT6
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
?2007 Fairchild Semiconductor Corporation
FDC637BNZ Rev.C
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDC638APZ | MOSFET P-CH 20V 4.5A SSOT-6 |
| FDC638P | MOSFET P-CH 20V 4.5A SSOT-6 |
| FDC6392S | MOSFET P-CH 20V 2.2A SSOT-6 |
| FDC6401N | MOSFET N-CH DUAL 20V SSOT-6 |
| FDC640P_F095 | MOSFET P-CH 20V 4.5A 6-SSOT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDC638 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel 2.5V Specified PowerTrenchTM MOSFET |
| FDC638APZ | 功能描述:MOSFET -20V P-Channel 2.5V PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDC638H | 制造商:Fairchild Semiconductor Corporation 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| FDC638P | 功能描述:MOSFET SSOT-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDC638P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SUPERSOT-6 |
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