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参数资料
| 型号： | FDC645N_F095 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 5.5A 6-SSOT |
| 产品变化通告： | Mold Compound Change 08/April/2008 |
| 标准包装： | 3,000 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 5.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 26 毫欧 @ 6.2A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 21nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1460pF @ 15V |
| 功率 - 最大： | 800mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 细型，TSOT-23-6 |
| 供应商设备封装： | 6-SSOT |
| 包装： | 带卷 (TR) |
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV DSS
? BV DSS
? T J
I DSS
I GSSF
I GSSR
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V GS = 0 V, I D = 250 μ A
I D = 250 μ A, Referenced to 25 ° C
V DS = 24 V, V GS = 0 V
V GS = 12 V, V DS = 0 V
V GS = –12 V, V DS = 0 V
30
22
1
100
–100
V
mV/ ° C
μ A
nA
nA
On Characteristics
(Note 2)
V GS(th)
? V GS(th)
? T J
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
V DS = V GS , I D = 250 μ A
I D = 250 μ A, Referenced to 25 ° C
0.8
1.4
–4
2
V
mV/ ° C
R DS(on)
I D(on)
g FS
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V GS = 4.5 V,
V GS = 10 V,
V GS = 4.5 V,
V GS = 4.5 V,
V DS = 10 V,
I D = 5.5 A
I D = 6.2 A
I D = 5.5 A, T J =125 ° C
V DS = 5 V
I D = 5.5 A
20
25
23
34
33
30
26
48
m ?
A
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 15 V, V GS = 0 V,
f = 1.0 MHz
1460
227
96
pF
pF
pF
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V DS = 15 V, I D = 1 A,
V GS = 4.5 V, R GEN = 6 ?
V DS = 15 V, I D = 6.2 A,
V GS = 4.5 V
8
9
35
7
13
3.6
3.6
16
18
56
14
21
ns
ns
ns
ns
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain–Source Diode Forward Current
1.3
A
V SD
Drain–Source Diode Forward
Voltage
V GS = 0 V, I S = 1.3 A
(Note 2)
0.7
1.2
V
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain
pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
78°C/W when mounted on a 1in pad of 2oz copper on FR-4 board.
a.
b.
2
156°C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width ≤ 300 μ s, Duty Cycle ≤ 2.0%
FDC645N Rev C(W)
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