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| 型号： | FDC645N |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 5.5A SSOT-6 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 08/April/2008 |
| 标准包装： | 3,000 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 5.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 26 毫欧 @ 6.2A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 21nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1460pF @ 15V |
| 功率 - 最大： | 800mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 细型，TSOT-23-6 |
| 供应商设备封装： | 6-SSOT |
| 包装： | 带卷 (TR) |
April 2001
FDC645N
N-Channel PowerTrench ? MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
? 5.5 A, 30 V.
R DS(ON) = 30 m ? @ V GS = 4.5 V
R DS(ON) = 26 m ? @ V GS = 10 V
switching PWM controllers. It has been optimized for
low gate charge, low R DS(ON) and fast switching speed.
Applications
? DC/DC converter
? High performance trench technology for extremely
low R DS(ON)
? Low gate charge (13 nC typical)
? High power and current handling capability
D
D
S
1
6
2
5
SuperSOT -6
TM
D
D
G
3
4
Absolute Maximum Ratings
T A =25 o C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
30
± 12
Units
V
V
I D
Drain Current
– Continuous
(Note 1a)
5.5
A
– Pulsed
20
P D
Maximum Power Dissipation
(Note 1a)
1.6
W
(Note 1b)
0.8
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
° C
Thermal Characteristics
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
° C/W
° C/W
Package Marking and Ordering Information
Device Marking
.645
Device
FDC645N
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
? 2000 Fairchild Semiconductor Corporation
FDC645N Rev C(W)
相关PDF资料 |
PDF描述 |
|---|---|
| FDC6506P | MOSFET P-CHAN DUAL 30V SSOT6 |
| FDC653N | MOSFET N-CH 30V 5A SSOT-6 |
| FDC654P | MOSFET P-CH 30V 3.6A SSOT-6 |
| FDC655BN | MOSFET N-CH 30V 6.3A SSOT-6 |
| FDC6561AN | MOSFET N-CHAN DUAL 30V SSOT6 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDC645N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SUPERSOT-6 |
| FDC645N_01 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET |
| FDC645N_F095 | 功能描述:MOSFET 30V 5.5A N-CH POWERTRENCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDC645N-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDC645N Series 30 V 26 mOhm N-Channel PowerTrench Mosfet - SSOT-6 |
| FDC6506 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual P-Channel Logic Level PowerTrench⑩ MOSFET |
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