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| 型号： | FDC653N |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 5A SSOT-6 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 08/April/2008 |
| 产品目录绘图： | MOSFET SuperSOT-6 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 35 毫欧 @ 5A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 17nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 350pF @ 15V |
| 功率 - 最大： | 800mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 细型，TSOT-23-6 |
| 供应商设备封装： | 6-SSOT |
| 包装： | 标准包装 |
| 产品目录页面： | 1602 (CN2011-ZH PDF) |
November 1997
FDC653N
N-Channel Enhancement Mode Field Effect Transistor
General Description
This N-Channel enhancement mode power field effect
transistors is produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
tailored to minimize on-state resistance. These devices are
particularly suited for low voltage applications in notebook
computers, portable phones, PCMICA cards, and other
battery powered circuits where fast switching, and low in-line
power loss are needed in a very small outline surface mount
package.
Features
5 A, 30 V. R DS(ON) = 0.035 ? @ V GS = 10 V
R DS(ON) = 0.055 ? @ V GS = 4.5 V.
Proprietary SuperSOT TM -6 package design using copper
lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low R DS(ON) .
Exceptional on-resistance and maximum DC current
capability.
.65
SOT-23
SuperSOT TM -6
D
D
S
3
SuperSOT TM -8
SO-8
1
2
SOT-223
6
5
SOIC-16
G
SuperSOT
TM
-6
pin 1
D
D
3
4
Absolute Maximum Ratings
T A = 25°C unless otherwise note
Symbol Parameter
FDC653N
Units
V DSS
V GSS
Drain-Source Voltage
Gate-Source Voltage - Continuous
30
±20
V
V
I D
Drain Current - Continuous
(Note 1a)
5
A
- Pulsed
15
P D
Maximum Power Dissipation
(Note 1a)
1.6
W
(Note 1b)
0.8
T J ,T STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
°C/W
°C/W
? 1997 Fairchild Semiconductor Corporation
FDC653N Rev.C
相关PDF资料 |
PDF描述 |
|---|---|
| FDC654P | MOSFET P-CH 30V 3.6A SSOT-6 |
| FDC655BN | MOSFET N-CH 30V 6.3A SSOT-6 |
| FDC6561AN | MOSFET N-CHAN DUAL 30V SSOT6 |
| FDC658AP | MOSFET P-CH SGL LL 30V 4A SSOT6 |
| FDC658P | MOSFET P-CH 30V 4A SSOT-6 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDC653N_F095 | 功能描述:MOSFET 30V 5A N-CH ENHANCEMENT MODE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDC653N-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDC653N 30 V 0.035 Ohm N-Ch Enhancement Mode Field Effect Transistor - SSOT-6 |
| FDC654P | 功能描述:MOSFET SSOT-6 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDC654P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDC654P_G | 制造商:FAIRCHILD 功能描述:MOSFET, -30V/3.6A, SSOT6 (Halogen Free) |
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