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| 型号： | FDC653N |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 5A SSOT-6 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 08/April/2008 |
| 产品目录绘图： | MOSFET SuperSOT-6 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 35 毫欧 @ 5A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 17nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 350pF @ 15V |
| 功率 - 最大： | 800mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 细型，TSOT-23-6 |
| 供应商设备封装： | 6-SSOT |
| 包装： | 标准包装 |
| 产品目录页面： | 1602 (CN2011-ZH PDF) |
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
T J = 55 C
BV DSS
? BV DSS / ? T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
V GS = 0 V, I D = 250 μA
I D = 250 μA, Referenced to 25 o C
V DS = 24 V, V GS = 0 V
V GS = 20 V, V DS = 0 V
V GS = -20 V, V DS = 0 V
o
30
31
1
10
100
-100
V
mV / o C
μA
μA
nA
nA
ON CHARACTERISTICS (Note 2)
V GS(th)
? V GS(th) / ? T J
R DS(ON)
Gate Threshold Voltage
Gate Threshold VoltageTemp.Coefficient
Static Drain-Source On-Resistance
V DS = V GS , I D = 250 μA
I D = 250 μA, Referenced to 25 o C
V GS = 10 V, I D = 5 A
1
1.7
-4.2
0.027
2
0.035
V
mV / o C
?
T J = 125 C
V GS = 4.5 V, I D = 4.2 A
o
0.042
0.046
0.056
0.055
I D(on)
g FS
On-State Drain Current
Forward Transconductance
V GS = 10 V, V DS = 5 V
V DS = 10 V, I D = 5 A
8
6.2
A
S
DYNAMIC CHARACTERISTICS
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 15 V, V GS = 0 V,
f = 1.0 MHz
350
220
80
pF
pF
pF
SWITCHING CHARACTERISTICS (Note 2)
t D(on)
t r
t D(off)
t f
Q g
Q gs
Q gd
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 10 V, I D = 1 A,
V GS = 4.5 V, R GEN = 6 ?
V DS = 15 V, I D = 5 A,
V GS = 10 V
7.5
12
13
6
12
2.1
2.6
15
25
25
15
17
ns
ns
ns
ns
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
I S
Continuous Source Diode Current
1.3
A
V SD
Drain-Source Diode Forward Voltage
V GS = 0 V, I S = 1.3 A
(Note 2)
0.75
1.2
V
T J = 125 o C
0.6
1
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θ JC is guaranteed by
design while R θ CA is determined by the user's board design.
a. 78 o C/W when mounted on a minimum on a 1 in 2 pad of 2oz Cu in FR-4 board.
b. 156 o C/W when mounted on a minimum pad of 2oz Cu in FR-4 board.
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
FDC653N Rev.C
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| FDC6561AN | MOSFET N-CHAN DUAL 30V SSOT6 |
| FDC658AP | MOSFET P-CH SGL LL 30V 4A SSOT6 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDC653N_F095 | 功能描述:MOSFET 30V 5A N-CH ENHANCEMENT MODE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDC653N-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDC653N 30 V 0.035 Ohm N-Ch Enhancement Mode Field Effect Transistor - SSOT-6 |
| FDC654P | 功能描述:MOSFET SSOT-6 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDC654P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDC654P_G | 制造商:FAIRCHILD 功能描述:MOSFET, -30V/3.6A, SSOT6 (Halogen Free) |
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