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| 型号： | FDC655BN |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 6.3A SSOT-6 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Design/Process Change 11/May/2007 Mold Compound Change 08/April/2008 |
| 产品目录绘图： | MOSFET SuperSOT-6 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 6.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 25 毫欧 @ 6.3A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 570pF @ 15V |
| 功率 - 最大： | 800mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 细型，TSOT-23-6 |
| 供应商设备封装： | 6-SSOT |
| 包装： | 标准包装 |
| 产品目录页面： | 1603 (CN2011-ZH PDF) |
| 其它名称： | FDC655BNDKR |
January 2010
FDC655BN
Single N-Channel, Logic Level, PowerTrench ? MOSFET
30 V, 6.3 A, 25 m ?
tm
Features
Max r DS(on) = 25 m ? at V GS = 10 V, I D = 6.3 A
Max r DS(on) = 33 m ? at V GS = 4.5 V, I D = 5.5 A
Fast switching
Low gate charge
High performance trchnology for extremely low r DS(on)
Termination is Lead-free and RoHS Compliant
General Description
This N-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor’s advanced PowerTrench ? process
that has been especially tailored to minimize the on-state
resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery
powered applicatoins where low in-line power loss and fast
switching are required.
D
D
G
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
D
D
S
Symbol
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
30
±20
Units
V
V
I D
P D
-Continuous
-Pulsed
Power Dissipation
Power Dissipation
T A = 25°C
(Note 1a)
( Note 1a)
(Note 1b)
6.3
20
1.6
0.8
A
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to + 150
°C
Thermal Characteristics
R θ JA
Thermal Resistance, Junction to Ambient
(Note 1a)
78
°C/W
Package Marking and Ordering Information
Device Marking
.55B
Device
FDC655BN
Package
SSOT-6 TM
Reel Size
7 ’’
Tape Width
8 mm
Quantity
3000 units
?2010 Fairchild Semiconductor Corporation
FDC655BN Rev . C2
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDC6561AN | MOSFET N-CHAN DUAL 30V SSOT6 |
| FDC658AP | MOSFET P-CH SGL LL 30V 4A SSOT6 |
| FDC658P | MOSFET P-CH 30V 4A SSOT-6 |
| FDC855N | MOSFET N-CH 30V 6.1A 6-SSOT |
| FDC8601 | MOSFET N-CH 100V TRENCH SSOT-6 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDC655BN | 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET 30V 6.3mA |
| FDC655BN_F123 | 功能描述:MOSFET 30V N-CHAN 0.025Ohms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDC655N | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| FDC6561 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Channel Logic Level PowerTrenchTM MOSFET |
| FDC6561AN | 功能描述:MOSFET SSOT-6 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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