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| 型号： | FDC655BN |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 6.3A SSOT-6 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Design/Process Change 11/May/2007 Mold Compound Change 08/April/2008 |
| 产品目录绘图： | MOSFET SuperSOT-6 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 6.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 25 毫欧 @ 6.3A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 570pF @ 15V |
| 功率 - 最大： | 800mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 细型，TSOT-23-6 |
| 供应商设备封装： | 6-SSOT |
| 包装： | 标准包装 |
| 产品目录页面： | 1603 (CN2011-ZH PDF) |
| 其它名称： | FDC655BNDKR |
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
? BV DSS
? T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = 250 μ A, V GS = 0 V
I D = 250 μ A, referenced to 25°C
V DS = 24 V, V GS = 0 V
V GS = ±20 V, V DS = 0 V
30
25
1
±100
V
mV / °C
μ A
nA
On Characteristics
V GS(th)
? V GS(th)
? T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = 250 μ A
I D = 250 μ A, referenced to 25°C
1
1.9
-5
3
V
mV/°C
V GS = 10 V, I D = 6.3 A
21
25
r DS(on)
Static Drain to Source On Resistance
V GS = 4.5 V, I D = 5.5 A
26
33
m ?
V GS = 10 V, I D = 6.3 A, T J = 125°C
30
36
g FS
Forward Transconductance
V DS = 10 V, I D = 6.3 A
35
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 15 V, V GS = 0 V,
f = 1MHz
470
100
60
3.0
620
130
90
pF
pF
pF
?
Switching Characteristics
t d(on)
Turn-On Delay Time
6
11
ns
t r
t d(off)
t f
Q g
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
V DD = 15 V, I D = 1 A,
V GS = 10 V, R GEN = 6 ?
V GS = 0 V to 10 V
2
15
2
9
10
26
10
13
ns
ns
ns
nC
Q g
Q gs
Total Gate Charge
Gate to Source Charge
V GS = 0 V to 5 V
V DD = 15 V,
I D = 6.3 A
5
1.4
7
nC
nC
Q gd
Gate to Drain “Miller” Charge
1.6
nC
Drain-Source Diode Characteristics
I S
Maximum Continuous Drain-Source Diode Forward Current
1.3
A
V SD
Source-Drain Diode Forward Voltage
V GS = 0 V, I S = 1.3 A
(Note 2)
0.8
1.2
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
I F = 6.3 A, di/dt = 100 A/ μ s
15
4
26
10
ns
nC
Notes:
1: R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
R θ JC is guaranteed by design while R θ CA is determined by the user ’s board design.
a. 78 °C/W when mounted on a 1 in 2 pad of 2 oz copper on FR-4 board.
b. 156 °C/W when mounted on a minimum pad.
2: Pulse Test: Pulse Width<300 us, Duty Cycle<2.0%.
?2010 Fairchild Semiconductor Corporation
FDC655BN Rev . C2
2
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDC655BN | 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET 30V 6.3mA |
| FDC655BN_F123 | 功能描述:MOSFET 30V N-CHAN 0.025Ohms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDC655N | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| FDC6561 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Channel Logic Level PowerTrenchTM MOSFET |
| FDC6561AN | 功能描述:MOSFET SSOT-6 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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