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| 型号： | FDD2572 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 150V 29A D-PAK |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品目录绘图： | DPAK, TO-252(AA) |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 150V |
| 电流 - 连续漏极(Id) @ 25° C： | 29A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 54 毫欧 @ 9A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 34nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1770pF @ 25V |
| 功率 - 最大： | 135W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 标准包装 |
| 产品目录页面： | 1606 (CN2011-ZH PDF) |
| 其它名称： | FDD2572DKR |
September 2002
FDD2572 / FDU2572
N-Channel PowerTrench ? MOSFET
150V, 29A, 54m ?
Features
? r DS(ON) = 45m ? (Typ.), V GS = 10V, I D = 9A
? Q g (tot) = 26nC (Typ.), V GS = 10V
? Low Miller Charge
? Low Q RR Body Diode
? UIS Capability (Single Pulse and Repetitive Pulse)
? Qualified to AEC Q101
Formerly developmental type 82860
Applications
? DC/DC converters and Off-Line UPS
? Distributed Power Architectures and VRMs
? Primary Switch for 24V and 48V Systems
? High Voltage Synchronous Rectifier
? Direct Injection / Diesel Injection Systems
? 42V Automotive Load Control
? Electronic Valve Train Systems
GATE
SOURCE
TO-252AA
FDD SERIES
DRAIN
(FLANGE)
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
TO-251AA
FDU SERIES
G
D
S
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
Symbol
V DSS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
150
± 20
Units
V
V
Drain Current
Continuous (T C = 25 o C, V GS = 10V)
29
A
Continuous (T C = 100 C, V GS = 10V)
C
I D
E AS
P D
T J , T STG
o
Continuous (T amb = 25 o C, V GS = 10V, R θ JA = 52 o C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25 o C
Operating and Storage Temperature
20
4
Figure 4
36
135
0.9
-55 to 175
A
A
mJ
W
W/ o C
o
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance Junction to Case TO-251, TO-252
Thermal Resistance Junction to Ambient TO-251, TO-252
1.11
100
o
o
C/W
C/W
R θ JA
Thermal Resistance Junction to Ambient TO-252, 1in 2 copper pad area
52
o C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
?2002 Fairchild Semiconductor Corporation
FDD2572 / FDU2572 Rev. B
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相关代理商/技术参数 |
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| FDD2572 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDD2572_F085 | 功能描述:MOSFET N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDD2572_F085_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 150V, 29A, 54m?? |
| FDD2582 | 功能描述:MOSFET N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDD2582_Q | 功能描述:MOSFET N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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