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参数资料
| 型号： | FDD3N40TF |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 400V 2A DPAK |
| 标准包装： | 1 |
| 系列： | UniFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 400V |
| 电流 - 连续漏极(Id) @ 25° C： | 2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.4 欧姆 @ 1A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 6nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 225pF @ 25V |
| 功率 - 最大： | 30W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 标准包装 |
| 其它名称： | FDD3N40TFDKR |
Package Marking and Ordering Information
Part Number
FDD3N40TM
FDU3N40TU
Top Mark
FDD3N40
FDU3N40
Package
DPAK
IPAK
Packing Method
Tape and Reel
Tube
Reel Size
330 mm
N/A
Tape Width
16 mm
N/A
Quantity
2500 units
75 units
Electrical Characteristics
T C = 25°C unless otherwise noted .
Symbol
Parameter
Conditions
Min.
Typ.
Max
Unit
Off Characteristics
BV DSS
Δ BV DSS
/ Δ T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V GS = 0 V, I D = 250 μ A
I D = 250 μ A, Referenced to 25 ° C
V DS = 400 V, V GS = 0 V
V DS = 320 V, T C = 125 ° C
V GS = 30 V, V DS = 0 V
V GS = -30 V, V DS = 0 V
400
--
--
--
--
--
--
0.4
--
--
--
--
--
--
1
10
100
-100
V
V/ ° C
μ A
μ A
nA
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V DS = V GS , I D = 250 μ A
V GS = 10 V, I D = 1 A
V DS = 40 V, I D = 1 A
3.0
--
--
--
2.8
2
5.0
3.4
--
V
Ω
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25 V, V GS = 0 V,
f = 1 MHz
--
--
--
173
30
3.7
225
40
6
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 200 V, I D = 3 A,
V GS = 10 V, R G = 25 Ω
V DS = 320 V, I D = 3 A,
V GS = 10 V
(Note 4)
(Note 4)
--
--
--
--
--
--
--
10
30
10
25
4.5
1.2
2
30
70
30
60
6
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
I SM
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
2
8
A
A
V SD
t rr
Q rr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = 2 A
V GS = 0 V, I S = 3 A,
dI F /dt =100 A/ μ s
--
--
--
--
210
0.75
1.4
--
--
V
ns
μ C
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 20 mH, I AS = 2 A, V DD = 50 V, R G = 25 Ω , starting T J = 25 ° C.
3. I SD ≤ 2 A, di/dt ≤ 200 A/ μ s, V DD ≤ BV DSS , starting T J = 25 ° C.
4. Essentially independent of operating temperature typical characteristics.
?2007 Fairchild Semiconductor Corporation
FDD3N40 / FDU3N40 Rev. C3
2
www.fairchildsemi.com
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