- 您现在的位置：买卖IC网 > PDF目录21854 > FDD3N40TM (Fairchild Semiconductor)MOSFET N-CH 400V 2A DPAK PDF资料下载
参数资料
| 型号： | FDD3N40TM |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 400V 2A DPAK |
| 产品目录绘图： | DPAK, TO-252(AA) |
| 标准包装： | 1 |
| 系列： | UniFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 400V |
| 电流 - 连续漏极(Id) @ 25° C： | 2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.4 欧姆 @ 1A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 6nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 225pF @ 25V |
| 功率 - 最大： | 30W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 标准包装 |
| 产品目录页面： | 1606 (CN2011-ZH PDF) |
| 其它名称： | FDD3N40TMDKR |
November 2013
FDD3N40 / FDU3N40
N-Channel UniFET TM MOSFET
400 V, 2 A, 3.4 Ω
Features
? R DS(on) = 3.4 Ω (Typ.) @ V GS = 10 V, I D = 1 A
? Low Gate Charge (Typ. 4.5 nC)
? Low C rss (Typ. 3.7 pF)
? 100% Avalanche Tested
Applications
Description
UniFET TM MOSFET is Fairchild Semiconductor ’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
? LED TV
? Consumer Appliances
? Lighting
? Uninterruptible Power Supply
D
D
G
S
D-PAK
G
D
S
I-PAK
G
Absolute Maximum Ratings
T C = 25°C unless otherwise noted.
S
Symbol
V DSS
Drain-Source Voltage
Parameter
FDD3N40TM / FDU3N40TU
400
Unit
V
I D
Drain Current
- Continuous (T C = 25 ° C)
- Continuous (T C = 100 ° C)
2.0
1.25
A
A
I DM
V GSS
Drain Current
Gate-Source voltage
- Pulsed
(Note 1)
8.0
± 30
A
V
E AS
I AR
E AR
dv/dt
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
46
2
3
4.5
mJ
A
mJ
V/ns
P D
Power Dissipation
(T C = 25 ° C)
- Derate Above 25 ° C
30
0.24
W
W/ ° C
T J, T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +150
300
° C
° C
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDD3N40TM / FDU3N40TU
4.2
110
Unit
° C/W
° C/W
?2007 Fairchild Semiconductor Corporation
FDD3N40 / FDU3N40 Rev. C3
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| OPB859 | SENS OPTO SLOT 3.18MM TRANS THRU |
| OPB842W55Z | SENS OPTO SLOT 3.18MM TRANS C-MT |
| MX3SWT-A1-0000-000D50 | LED XLAMP 6000K COOL WHITE SMD |
| 344P2 | CABLE R/A MALE 4POS SGL-END 2M |
| OPB801W55Z | SENS OPTO SLOT 9.53MM TRANS C-MT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDD3N50NZ | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET 500V, 2.5A, 2.5??? |
| FDD3N50NZTM | 功能描述:MOSFET UNIFET2 500V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDD4141 | 功能描述:MOSFET -40V P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDD4141_10 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel PowerTrench?? MOSFET -40V, -50A, 12.3m?? |
| FDD4141_F085 | 功能描述:MOSFET Trans MOS P-Ch 40V 10.8A 3-Pin 2+Tab RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。