参数资料
型号: FDD3N40TM
厂商: Fairchild Semiconductor
文件页数: 4/9页
文件大小: 0K
描述: MOSFET N-CH 400V 2A DPAK
产品目录绘图: DPAK, TO-252(AA)
标准包装: 1
系列: UniFET™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 400V
电流 - 连续漏极(Id) @ 25° C: 2A
开态Rds(最大)@ Id, Vgs @ 25° C: 3.4 欧姆 @ 1A,10V
Id 时的 Vgs(th)(最大): 5V @ 250µA
闸电荷(Qg) @ Vgs: 6nC @ 10V
输入电容 (Ciss) @ Vds: 225pF @ 25V
功率 - 最大: 30W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: D-Pak
包装: 标准包装
产品目录页面: 1606 (CN2011-ZH PDF)
其它名称: FDD3N40TMDKR
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
1.1
2.0
1.0
1.5
1.0
0.9
* Notes :
1. V GS = 0 V
2. I D = 250 μ A
0.5
* Notes :
1. V GS = 10 V
2. I D = 1 A
T J , Junction Temperature [ C]
T J , Junction Temperature [ C]
0.8
-100
-50
0 50 100
o
150
200
0.0
-100
-50
0 50 100
o
150
200
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
2.5
10
10
1
0
Operation in This Area
1 ms
10 ms
100 ms
10 μ s
100 μ s
2.0
1.5
10
1. T C = 25 C
2. T J = 150 C
-1
is Limited by R DS(on)
DC
* Notes :
o
o
3. Single Pulse
1.0
0.5
10
10
10
10
-2
0
1
2
0.0
25
50
75
100
125
150
T C , Case Temperature [ C]
V DS , Drain-Source Voltage [V]
o
Figure 11. Transient Thermal Response Curve
D = 0 .5
10
0
0 .2
0 .1
0 .0 5
0 .0 2
P DM
* N o te s :
t 1
t 2
1 . Z θ J C ( t) = 4 .2
C /W M a x .
10
-1
0 .0 1
s in g le p u ls e
o
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C ( t)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]
?2007 Fairchild Semiconductor Corporation
FDD3N40 / FDU3N40 Rev. C3
4
www.fairchildsemi.com
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