参数资料
型号: FDD4141_F085
厂商: Fairchild Semiconductor
文件页数: 1/6页
文件大小: 0K
描述: MOSFET P-CH 40V 10.8A DPAK
标准包装: 2,500
系列: PowerTrench®
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 40V
电流 - 连续漏极(Id) @ 25° C: 10.8A
开态Rds(最大)@ Id, Vgs @ 25° C: 12.3 毫欧 @ 12.7A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 50nC @ 10V
输入电容 (Ciss) @ Vds: 2775pF @ 20V
功率 - 最大: 2.4W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: TO-252
包装: 带卷 (TR)
July 2007
FDD4141
P-Channel PowerTrench ? MOSFET
-40V, -50A, 12.3m ?
Features
Max r DS(on) = 12.3m ? at V GS = -10V, I D = -12.7A
Max r DS(on) = 18.0m ? at V GS = -4.5V, I D = -10.4A
High performance trench technology for extremely low r DS(on)
RoHS Compliant
tm
General Description
This P-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench ? technology to
deliver low r DS(on) and optimized Bvdss capability to offer
superior performance benefit in the applications. and optimized
switching performance capability reducing power dissipation
losses in converter/inverter applications.
Applications
Inverter
Power Supplies
S
D TO -2 52
G
S
-PA K
(TO -252)
D
G
D
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
Symbol
V DS
V GS
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
T C = 25°C
Ratings
-40
±20
-50
Units
V
V
I D
-Continuous (Silicon limited)
-Continuous
T C = 25°C
T A = 25°C
(Note 1a)
-58
-10.8
A
-Pulsed
-100
E AS
Single Pulse Avalanche Energy
(Note 3)
337
mJ
P D
Power Dissipation
Power Dissipation
T C = 25°C
T A = 25°C
(Note 1a)
69
2.4
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
1.8
52
°C/W
Package Marking and Ordering Information
Device Marking
FDD4141
Device
FDD4141
Package
D-PAK (TO-252)
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
?2007 Fairchild Semiconductor Corporation
FDD4141 Rev.C
1
www.fairchildsemi.com
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