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| 型号： | FDD5670 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 52A D-PAK |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 2,500 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 52A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 15 毫欧 @ 10A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 73nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2739pF @ 15V |
| 功率 - 最大： | 1.6W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252 |
| 包装： | 带卷 (TR) |
November 20 11
FDD5670
60V N-Channel PowerTrench ? MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
? 52 A, 60 V
R DS(ON) = 15 m Ω @ V GS = 10 V
R DS(ON) = 18 m Ω @ V GS = 6 V
switching PWM controllers. It has been optimized for
low gate charge, low R DS( ON) and fast switching speed.
extremely low R DS(ON) in a small package.
Applications
? DC/DC converter
? Low gate charge
? Fast switching
? High performance trench technology for extremely
low R DS(ON)
? Motor drives
D
D
G
S
TO-252
G
S
Absolute Maximum Ratings
T A =25 o C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
60
± 20
Units
V
V
I D
Drain Current
– Continuous
(Note 3)
52
A
– Pulsed
(Note 1a)
150
P D
Power Dissipation for Single Operation
(Note 1)
83
W
(Note 1a)
(Note 1b)
3.8
1.6
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +175
° C
Thermal Characteristics
R θ JC
R θ JA
R θ JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
1.8
40
96
° C/W
° C/W
° C/W
Package Marking and Ordering Information
Device Marking
FDD5670
Device
FDD5670
Reel Size
13’’
Tape width
16mm
Quantity
2500 units
? 20 11 Fairchild Semiconductor Corporation
FDD5670 Rev B 2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDD5670_11 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:60V N-Channel PowerTrench?? MOSFET |
| FDD5680 | 功能描述:MOSFET N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDD5690 | 功能描述:MOSFET 60V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDD5690 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D-PAK |
| FDD5690_02 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:60V N-Channel PowerTrench㈢ MOSFET |
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