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参数资料
| 型号： | FDD5N50NZTM |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 500V DPAK |
| 标准包装： | 2,500 |
| 系列： | UniFET-II™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 500V |
| 电流 - 连续漏极(Id) @ 25° C： | 4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.5 欧姆 @ 2A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 12nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 440pF @ 25V |
| 功率 - 最大： | 62W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
November 2013
FDD5N50NZ
N-Channel UniFET TM II MOSFET
500 V, 4 A, 1.5 Ω
Features
? R DS(on) = 1.38 Ω (Typ.) @ V GS = 10 V, I D = 2 A
? Low Gate Charge (Typ. 9 nC)
? Low C rss (Typ. 4 pF)
? 100% Avalanche Tested
? Improved dv/dt Capability
? ESD Imoroved Capability
? RoHS Compliant
Applications
Description
UniFET TM II MOSFET is Fairchild Semiconductor ’s high voltage
MOSFET family based on advanced planar stripe and DMOS
technology. This advanced MOSFET family has the smallest
on-state resistance among the planar MOSFET, and also pro-
vides superior switching performance and higher avalanche
energy strength. In addition, internal gate-source ESD diode
allows UniFET TM II MOSFET to withstand over 2kV HBM surge
stress. This device family is suitable for switching power con-
verter applications such as power factor correction (PFC), flat
panel display (FPD) TV power, ATX and electronic lamp bal-
lasts.
? LCD/LED/PDP TV
? Lighting
? Uninterruptible Power Supply
D
D
G
S
D-PAK
G
S
Absolute Maximum Ratings T C =
25 o C
unless otherwise noted.
Symbol
V DSS
Drain to Source Voltage
Parameter
FDD5N50NZTM
500
Unit
V
V GSS
I D
Gate to Source Voltage
Drain Current
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
±25
4
2.4
V
A
I DM
Drain Current
- Pulsed
(Note 1)
16
A
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25 o C)
- Derate Above 25 o C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
304
4
6.2
10
62
0.5
mJ
A
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +150
300
o
o
C
C
Thermal Characteristics
Symbol
Parameter
FDD5N50NZTM
Unit
R θ JC
R θ JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
2.0
90
o
C/W
?2010 Fairchild Semiconductor Corporation
FDD5N50NZ Rev. C1
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDD5N50TM_WS | MOSFET N-CH 500V 4A DPAK |
| FDD5N50UTM_WS | MOSFET N-CH 500V 3A DPAK |
| FDD5N53TM_WS | MOSFET N-CH 530V 4A DPAK |
| FDD6030L | MOSFET N-CH 30V 12A DPAK |
| FDD6530A | MOSFET N-CH 20V 21A D-PAK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDD5N50TF | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDD5N50TF_WS | 功能描述:MOSFET UniFET 500V 4A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDD5N50TM | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDD5N50TM_WS | 功能描述:MOSFET UniFET 500V 4A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDD5N50U | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET, FRFET 500V, 3A, 2.0ヘ |
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