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参数资料
| 型号： | FDD5N53TM_WS |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 530V 4A DPAK |
| 产品变化通告： | Product Discontinuation 27/Feb/2012 |
| 标准包装： | 2,500 |
| 系列： | UniFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 530V |
| 电流 - 连续漏极(Id) @ 25° C： | 4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.5 欧姆 @ 2A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 640pF @ 25V |
| 功率 - 最大： | 40W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
January 2009
FDD5N53/FDU5N53
N-Channel MOSFET
530V, 4A, 1.5 Ω
Features
? R DS(on) = 1.25 Ω ( Typ.)@ V GS = 10V, I D = 2A
? Low gate charge ( Typ. 11nC)
? Low C rss ( Typ. 5pF)
? Fast switching
? 100% avalanche tested
? Improved dv/dt capability
UniFET TM
tm
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pluse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power suppliesand active power
factor correction.
? RoHS compliant
D
G
D
G
S
D-PAK
FDD Series
G
D S
I-PAK
FDU Series
S
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted*
Symbol
V DSS
V GSS
Drain to Source Voltage
Gate to Source Voltage
Parameter
FDD5N53/FDU5N53
530
±30
Units
V
V
I D
Drain Current
-Continuous (T C = 25 o C)
-Continuous (T C = 100 o C)
4
2.4
A
I DM
Drain Current
- Pulsed
(Note 1)
16
A
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25 o C)
- Derate above 25 o C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
256
4
4
4.5
40
0.3
mJ
A
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +150
300
o
o
C
C
Thermal Characteristics
Symbol
Parameter
Ratings
Units
R θ JC
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
1.4
110
o
C/W
?2009 Fairchild Semiconductor Corporation
FDD5N53/FDU5N53 Rev. A
1
www.fairchildsemi.com
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