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参数资料
型号： FDD5N53TM_WS
厂商： Fairchild Semiconductor
文件页数： 2/9页
文件大小： 0K
描述： MOSFET N-CH 530V 4A DPAK
产品变化通告： Product Discontinuation 27/Feb/2012
标准包装： 2,500
系列： UniFET™
FET 型： MOSFET N 通道，金属氧化物
FET 特点： 标准
漏极至源极电压(Vdss)： 530V
电流 - 连续漏极(Id) @ 25° C： 4A
开态Rds（最大）@ Id, Vgs @ 25° C： 1.5 欧姆 @ 2A，10V
Id 时的 Vgs(th)（最大）： 5V @ 250µA
闸电荷(Qg) @ Vgs： 15nC @ 10V
输入电容 (Ciss) @ Vds： 640pF @ 25V
功率 - 最大： 40W
安装类型： 表面贴装
封装/外壳： TO-252-3，DPak（2 引线+接片），SC-63
供应商设备封装： D-Pak
包装： 带卷 (TR)
Package Marking and Ordering Information T C = 25 o C unless otherwise noted
Device Marking
FDD5N53
FDD5N53
FDU5N53
Device
FDD5N53TM
FDD5N53TF
FDU5N53TU
Package
D-PAK
D-PAK
I-PAK
Reel Size
380mm
380mm
-
Tape Width
16mm
16mm
-
Quantity
2500
2000
70
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV DSS
Δ BV DS S
Δ T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
I D = 250 μ A, V GS = 0V, T J = 25 o C
I D = 250 μ A, Referenced to 25 o C
V DS = 530V, V GS = 0V
V DS = 424V, T C = 125 o C
V GS = ±30V, V DS = 0V
530
-
-
-
-
-
0.6
-
-
-
-
-
1
10
±100
V
V/ o C
μ A
nA
On Characteristics
V GS(th)
R DS(on)
Gate Threshold Voltage
Static Drain to Source On Resistance
V GS = V DS , I D = 250 μ A
V GS = 10V, I D = 2A
3.0
-
-
1.25
5.0
1.5
V
Ω
g FS
Forward Transconductance
V DS = 40V, I D = 2A
(Note 4)
-
4.3
-
S
Dynamic Characteristics
C iss
C oss
C rss
Q g(tot)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
V DS = 25V, V GS = 0V
f = 1MHz
-
-
-
-
480
66
5
11
640
88
8
15
pF
pF
pF
nC
Q gs
Q gd
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V DS = 400V, I D = 5A
V GS = 10V
(Note 4, 5)
-
-
3
5
-
-
nC
nC
Switching Characteristics
t d(on)
Turn-On Delay Time
-
13
36
ns
t r
t d(off)
t f
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = 250V, I D = 5A
R G = 25 Ω
(Note 4, 5)
-
-
-
22
28
20
54
66
50
ns
ns
ns
Drain-Source Diode Characteristics
I S
I SM
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
4
16
A
A
V SD
Drain to Source Diode Forward Voltage
V GS = 0V, I SD = 4A
-
-
1.4
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0V, I SD = 5A
dI F /dt = 100A/ μ s
(Note 4)
-
-
300
1.8
-
-
ns
μ C
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 32mH, I AS = 4A, V DD = 50V, R G = 25 Ω , Starting T J = 25°C
3: I SD ≤ 4A, di/dt ≤ 200A/ μ s, V DD ≤ BV DSS , Starting T J = 25°C
4: Pulse Test: Pulse width ≤ 300 μ s, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
FDD5N53/FDU5N53 Rev. A
2
www.fairchildsemi.com
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