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参数资料
| 型号： | FDD5N50UTM_WS |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 500V 3A DPAK |
| 标准包装： | 2,500 |
| 系列： | FRFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 500V |
| 电流 - 连续漏极(Id) @ 25° C： | 3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2 欧姆 @ 1.5A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 650pF @ 25V |
| 功率 - 最大： | 40W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
November 2013
FDD5N50U
N-Channel UniFET TM Ultra FRFET TM MOSFET
500 V, 3 A, 2.0 Ω
Features
? R DS(on) = 1.65 Ω (Typ.) @ V GS = 10 V, I D = 1.5 A
? Low Gate Charge (Typ. 11 nC)
? Low C rss (Typ. 5 pF)
? 100% Avalanche Tested
? RoHS Compliant
Applications
? LCD/LED/PDP TV
? Lighting
? Uninterruptible Power Supply
Description
UniFET TM MOSFET is Fairchild Semiconductor ’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. UniFET Ultra FRFET TM MOSFET has much
superior body diode reverse recovery performance. Its t rr is less
than 50nsec and the reverse dv/dt immunity is 20V/nsec while
normal planar MOSFETs have over 200nsec and 4.5V/nsec
respectively. Therefore UniFET Ultra FRFET MOSFET can
remove additional component and improve system reliability in
certain applications that require performance improvement of
the MOSFET’s body diode. This device family is suitable for
switching power converter applications such as power factor
correction (PFC), flat panel display (FPD) TV power, ATX and
electronic lamp ballasts.
D
D
G
S
D-PAK
G
S
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted.
Symbol
V DSS
Drain to Source Voltage
Parameter
FDD5N50UTM_WS
500
Unit
V
V GSS
I D
Gate to Source Voltage
Drain Current
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
±30
3
1.8
V
A
I DM
Drain Current
- Pulsed
(Note 1)
12
A
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25 o C)
- Derate Above 25 o C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
275
3
4
4.5
40
0.3
mJ
A
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +150
300
o
o
C
C
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDD5N50UTM_WS
1.4
110
Unit
o C/W
?2007 Fairchild Semiconductor Corporation
FDD5N50U Rev. C1
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDD5N53TM_WS | MOSFET N-CH 530V 4A DPAK |
| FDD6030L | MOSFET N-CH 30V 12A DPAK |
| FDD6530A | MOSFET N-CH 20V 21A D-PAK |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDD5N53 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET 530V, 4A, 1.5Ω |
| FDD5N53TF | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET 530V, 4A, 1.5Ω |
| FDD5N53TM | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDD5N53TM_WS | 功能描述:MOSFET N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDD5N60NZ | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel UniFET II MOSFET 600 V, 4.0 A, 2 Ohm |
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