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参数资料
| 型号： | FDD5690 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 30A D-PAK |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品目录绘图： | DPAK, TO-252(AA) |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 30A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 27 毫欧 @ 9A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 32nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1110pF @ 25V |
| 功率 - 最大： | 1.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252 |
| 包装： | 标准包装 |
| 产品目录页面： | 1606 (CN2011-ZH PDF) |
| 其它名称： | FDD5690DKR |
December 2002
FDD5690
60V N-Channel PowerTrench ? MOSFET
General Description
Features
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable R DS(ON)
specifications.
?
?
?
?
30 A, 60 V. R DS(ON) = 0.027 ? @ V GS = 10 V
R DS(ON) = 0.032 ? @ V GS = 6 V.
Low gate charge (23nC typical).
Fast switching speed.
High performance trench technology for extremely
low R DS(ON) .
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power supply
designs with higher overall efficiency.
D
D
G
S
G
T C =25 C unless otherwise noted
TO-252
Absolute Maximum Ratings
o
S
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
60
± 20
Units
V
V
I D
Maximum Drain Current
-Continuous
(Note 1)
30
A
(Note 1a)
9
Maximum Drain Current
-Pulsed
100
P D
Maximum Power Dissipation @ T C = 25 o C
T A = 25 o C
T A = 25 o C
(Note 1)
(Note 1a)
(Note 1b)
50
3.2
1.3
W
T J , T stg
Operating and Storage Junction Temperature Range
-55 to +150
° C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction-to- Case
Thermal Resistance, Junction-to- Ambient
(Note 1)
(Note 1a)
(Note 1b)
2.5
40
96
° C/W
° C/W
° C/W
Package Marking and Ordering Information
Device Marking
FDD5690
Device
FDD5690
Reel Size
13 ’’
Tape width
16mm
Quantity
2500
? 2002 Fairchild Semiconductor Corporation
FDD5690, Rev. C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDD5690 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D-PAK |
| FDD5690_02 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:60V N-Channel PowerTrench㈢ MOSFET |
| FDD5755 | 制造商:ELMEC 功能描述: 制造商:ELMEC 功能描述:Electronic Component |
| FDD5755C | 制造商:ELMEC 功能描述: 制造商:ELMEC 功能描述:Electronic Component |
| FDD5810 | 功能描述:MOSFET LOW_VOLTAGE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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