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参数资料
| 型号： | FDD5690 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 30A D-PAK |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品目录绘图： | DPAK, TO-252(AA) |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 30A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 27 毫欧 @ 9A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 32nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1110pF @ 25V |
| 功率 - 最大： | 1.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252 |
| 包装： | 标准包装 |
| 产品目录页面： | 1606 (CN2011-ZH PDF) |
| 其它名称： | FDD5690DKR |
Electrical Characteristics
T A = 25 ° C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
W DSS
Single Pulse Drain-Source
V DD = 30 V, I D = 30 A
90
mJ
Avalanche Energy
I AR
Maximum Drain-Source Avalanche Current
30
A
BV DSS
? BV DSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
V GS = 0 V, I D = 250 μ A
I D = 250 μ A, Referenced to 25 ° C
60
57
V
mV/ ° C
? T J
Coefficient
I DSS
I GSSF
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
V DS = 48 V, V GS = 0 V
V GS = 20V, V DS = 0 V
1
100
μ A
nA
Forward
I GSSR
Gate-Body Leakage Current,
V GS = -20 V, V DS = 0 V
-100
nA
Reverse
On Characteristics
(Note 2)
V GS(th)
? V GS(th)
Gate Threshold Voltage
Gate Threshold Voltage
V DS = V GS , I D = 250 μ A
I D = 250 μ A,Referenced to 25 ° C
2
2.5
-6
4
V
mV/ ° C
? T J
Temperature Coefficient
R DS(on)
Static Drain-Source
On-Resistance
V GS = 10 V, I D = 9 A
V GS = 10 V, I D = 9 A, T J = 125 ° C
0.023
0.032
0.027
0.048
?
V GS = 6 V, I D = 8 A
0.026
0.032
I D(on)
g FS
On-State Drain Current
Forward Transconductance
V GS = 10 V, V DS = 5 V
V DS = 5 V, I D = 9 A
25
24
A
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25 V, V GS = 0 V
f = 1.0 MHz
1110
150
75
pF
pF
pF
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 30 V, I D = 1 A
V GS = 10 V, R GEN = 6 ?
V DS = 30 V, I D = 9 A
V GS = 10 V,
10
9
24
10
23
4
6.8
18
18
39
18
32
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain-Sourc e Diode Forward Current
2.3
A
V SD
Drain-Source Diode Forward
V GS = 0 V, I S = 2.3 A
(Note 2)
0.75
1.2
V
Voltage
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the drain tab.
R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
a) R θ JA = 40oC/W when mounted
on a 1in2 pad of 2oz copper.
b) R θ JA = 96oC/W on a minimum
mounting pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 μ s, Duty Cycle ≤ 2.0%
FDD5690, Rev. C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDD5690 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D-PAK |
| FDD5690_02 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:60V N-Channel PowerTrench㈢ MOSFET |
| FDD5755 | 制造商:ELMEC 功能描述: 制造商:ELMEC 功能描述:Electronic Component |
| FDD5755C | 制造商:ELMEC 功能描述: 制造商:ELMEC 功能描述:Electronic Component |
| FDD5810 | 功能描述:MOSFET LOW_VOLTAGE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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