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参数资料
| 型号： | FDD6670A |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 15A DPAK |
| 产品培训模块： | High Voltage Switches for Power Processing SMPS Power Switch |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 15A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 8 毫欧 @ 15A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 22nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 1755pF @ 15V |
| 功率 - 最大： | 1.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252-3 |
| 包装： | 标准包装 |
| 其它名称： | FDD6670ADKR |
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
E AS
I AS
Drain-Source Avalanche Energy
Drain-Source Avalanche Current
Single Pulse, V DD = 15 V, I D = 66 A
67
66
mJ
A
Off Characteristics
BV DSS
Drain–Source Breakdown Voltage
V GS = 0 V,
I D = 250 μ A
30
V
? BV DSS
? T J
Breakdown Voltage Temperature
Coefficient
I D = 250 μ A,Referenced to 25 ° C
26
mV/ ° C
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate–Body Leakage
V DS = 24 V,
V GS = ± 20 V,
V GS = 0 V
V DS = 0 V
1
± 100
μ A
nA
On Characteristics
(Note 2)
V GS(th)
Gate Threshold Voltage
V DS = V GS ,
I D = 250 μ A
1
1.8
3
V
? V GS(th )
? T J
Gate Threshold Voltage
Temperature Coefficient
I D = 250 μ A,Referenced to 25 ° C
–5
mV/ ° C
R DS(on)
Static Drain–Source
On–Resistance
V GS
V GS
V GS
= 10 V, I D = 15 A
= 4.5 V, I D = 13 A
= 10 V, I D = 15 A,T J =125 ° C
6.3
7.9
9.5
8
10
13
m ?
I D(on)
On–State Drain Current
V GS
= 10 V,
V DS = 5 V
50
A
g FS
Forward Transconductance
V DS = 10 V,
I D = 15 A
60
S
Dynamic Characteristics
C iss
C oss
C rss
R G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 15 V,
f = 1.0 MHz
V GS = 15 mV,
V GS = 0 V,
f = 1.0 MHz
1755
430
180
1.3
pF
pF
pF
?
Switching Characteristics
(Note 2)
t d(on)
Turn–On Delay Time
11
20
ns
t r
t d(off)
t f
Q g
Q g s
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
V DD = 15 V,
V GS = 10 V,
V DS = 15V,
V GS = 5 V
I D = 1 A,
R GEN = 6 ?
I D = 15 A,
12
29
19
16
4.6
21
47
34
22
ns
ns
ns
nC
nC
Q gd
Gate–Drain Charge
6.2
nC
FDD6670A Rev. E1(W)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDD6670A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 30V 76A TO252 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 30V, 76A, TO252 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 30V, 76A, TO252; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:30V; On Resistance Rds(on):8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; No. of Pins:3 ;RoHS Compliant: Yes |
| FDD6670A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET, 30V, 66A, TO-252 |
| FDD6670A_05 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench MOSFET |
| FDD6670A_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDD6670A_Q | 功能描述:MOSFET 30V N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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