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参数资料
| 型号： | FDD6680AS |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 55A DPAK |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 55A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 10.5 毫欧 @ 12.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 29nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1200pF @ 15V |
| 功率 - 最大： | 1.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 标准包装 |
| 其它名称： | FDD6680ASFSDKR |
April 200 8
30V N-Channel PowerTrench SyncFET
FDD6680AS
General Description
? ?
Features
tm
The FDD6680AS is designed to replace a single
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
? 55 A, 30 V
R DS(ON) max= 10.5 m ? @ V GS = 10 V
R DS(ON) max= 13.0 m ? @ V GS = 4.5 V
maximize power conversion efficiency, providing a low
R DS(ON) and low gate charge. The FDD6680AS
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDD6680AS as the low-side switch in a
synchronous rectifier is indistinguishable from the
performance of the FDD6680A in parallel with a
Schottky diode.
Applications
? DC/DC converter
? Includes SyncFET Schottky body diode
? Low gate charge (21nC typical)
? High performance trench technology for extremely
low R DS(ON)
? High power and current handling capability
.
? Low side notebook
D
D
G
S
TO-252
G
S
Absolute Maximum Ratings
T A =25 o C unless otherwise noted
Symbol
Parameter
Ratings
Unit
s
V DSS
V GSS
Drain-Source Voltage
Gate-Source Voltage
30
± 20
V
V
I D
Drain Current
– Continuous
(Note 3)
55
A
– Pulsed
(Note 1a)
100
P D
Power Dissipation
(Note 1)
60
W
(Note 1a)
(Note 1b)
3.1
1.3
T J , T STG
Operating and Storage Junction Temperature Range
–55 to +150
° C
Thermal Characteristics
R θ JC
R θ JA
R θ JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
2.1
40
96
° C/W
° C/W
° C/W
Package Marking and Ordering Information
Device Marking
FDD6680AS
Device
FDD6680AS
Reel Size
13’’
Tape width
16mm
Quantity
2500 units
? 200 8 Fairchild Semiconductor Corporation
FDD6680AS Rev A 1 (X)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDD6680AS_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench㈢ SyncFET⑩ |
| FDD6680AS_NL | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench SyncFET |
| FDD6680S | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDD6680S | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D-PAK |
| FDD6680S | 制造商:Fairchild Semiconductor Corporation 功能描述:Transistors MOSFET RoHS Compliant:Yes |
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