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参数资料
| 型号： | FDD6680AS |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 55A DPAK |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 55A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 10.5 毫欧 @ 12.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 29nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1200pF @ 15V |
| 功率 - 最大： | 1.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 标准包装 |
| 其它名称： | FDD6680ASFSDKR |
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain-Source Avalanche Ratings (Note 2)
W DSS
I AR
Drain-Source Avalanche Energy
Drain-Source Avalanche Current
Single Pulse, V DD = 15 V,
I D =13.5A
54
205
13.5
mJ
A
Off Characteristics
BV DSS
? BV DSS
? T J
Drain–Source Breakdown
Voltage
Breakdown Voltage Temperature
Coefficient
V GS = 0 V, I D = 1 mA
I D = 1 mA, Referenced to 25 ° C
30
29
V
mV/ ° C
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate–Body Leakage
V DS = 24 V,
V GS = ± 20 V,
V GS = 0 V
V DS = 0 V
500
± 100
μ A
nA
On Characteristics
(Note 2)
V GS(th)
? V GS(th)
? T J
R DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
V DS = V GS , I D = 1 mA
I D = 1 mA, Referenced to 25 ° C
V GS = 10 V, I D = 12.5 A
1
1.4
–3
8.6
3
10.5
V
mV/ ° C
m ?
On–Resistance
V GS = 4.5 V, I D = 10 A
V GS = 10 V, I D = 12.5A, T J = 125 ° C
10.3
12.5
13.0
16.0
I D(on)
g FS
On–State Drain Current
Forward Transconductance
V GS = 10 V,
V DS = 15 V,
V DS = 5 V
I D = 12.5 A
50
44
A
S
Dynamic Characteristics
C iss
C oss
C rss
R G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 15 V,
f = 1.0 MHz
V GS = 15 mV,
V GS = 0 V,
f = 1.0 MHz
1200
350
120
1.6
pF
pF
pF
?
Switching Characteristics
(Note 2)
t d(on)
Turn–On Delay Time
10
20
ns
t r
t d(off)
t f
t d(on)
t r
t d(off)
t f
Q g (TOT)
Q g
Q gs
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge at Vgs=10V
Total Gate Charge at Vgs=5V
Gate–Source Charge
V DD = 15 V,
V GS = 10 V,
V DD = 15 V,
V GS = 4.5 V,
V DD = 15 V,
I D = 1 A,
R GEN = 6 ?
I D = 1 A,
R GEN = 6 ?
I D = 12.5 A
6
28
12
14
13
20
11
21
11
3
12
45
22
25
23
32
20
29
15
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
Q gd
Gate–Drain Charge
4
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain–Source Diode Forward Current
4.4
A
V SD
Drain–Source Diode Forward
V GS = 0 V, I S = 4.4 A
(Note 2)
0.5
0.7
V
Voltage
V GS = 0 V, I S = 7 A
(Note 2)
0.6
t rr
Q rr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
I F = 12.5A,
d iF /d t = 300 A/μs
(Note 3)
17
11
nS
nC
FDD6680AS Rev A 1 (X)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDD6680AS_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench㈢ SyncFET⑩ |
| FDD6680AS_NL | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench SyncFET |
| FDD6680S | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDD6680S | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D-PAK |
| FDD6680S | 制造商:Fairchild Semiconductor Corporation 功能描述:Transistors MOSFET RoHS Compliant:Yes |
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