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参数资料
| 型号： | FDD6682 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 75A DPAK |
| 标准包装： | 2,500 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 75A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 6.2 毫欧 @ 17A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 31nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 2400pF @ 15V |
| 功率 - 最大： | 1.6W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain-Source Avalanche Ratings (Note 2)
W DSS
I AR
Drain-Source Avalanche Energy
Drain-Source Avalanche Current
Single Pulse, V DD = 15 V, I D = 17 A
240
17
mJ
A
Off Characteristics
BV DSS
Drain–Source Breakdown Voltage
V GS = 0 V,
I D = 250 μ A
30
V
? BV DSS
? T J
Breakdown Voltage Temperature
Coefficient
I D = 250 μ A, Referenced to 25 ° C
20
mV/ ° C
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate–Body Leakage
V DS = 24 V,
V GS = ± 20 V,
V GS = 0 V
V DS = 0 V
1
± 100
μ A
nA
On Characteristics
(Note 2)
V GS(th)
Gate Threshold Voltage
V DS = V GS ,
I D = 250 μ A
1
1.9
3
V
? V GS(th)
? T J
Gate Threshold Voltage
Temperature Coefficient
I D = 250 μ A, Referenced to 25 ° C
–7
mV/ ° C
R DS(on)
Static Drain–Source
V GS = 10 V,
I D = 17 A
5.2
6.2
m ?
On–Resistance
V GS = 4.5 V, I D = 15 A
V GS = 10 V, I D = 17 A, T J =125 ° C
6.4
8.0
8
11.9
I D(on)
g FS
On–State Drain Current
Forward Transconductance
V GS = 10 V,
V DS = 5 V,
V DS = 5 V
I D = 17 A
50
65
A
S
Dynamic Characteristics
C iss
C oss
C rss
R G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 15 V,
f = 1.0 MHz
V GS = 15 mV,
V GS = 0 V,
f = 1.0 MHz
2400
577
258
1.4
pF
pF
pF
?
Switching Characteristics
(Note 2)
t d(on)
Turn–On Delay Time
14
20
ns
t r
t d(off)
t f
Q g
Q gs
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
V DD = 15 V,
V GS = 10 V,
V DS = 15V,
V GS = 5 V
I D = 1 A,
R GEN = 6 ?
I D = 17 A,
12
38
18
24
6.5
37
64
32
31
ns
ns
ns
nC
nC
Q gd
Gate–Drain Charge
8.1
nC
FDD6682/FDU6682 Rev H(W)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDD6682_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDD6685 | 功能描述:MOSFET 30V P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDD6685 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDD6685_11 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:30V P-Channel PowerTrench?? MOSFET |
| FDD6688 | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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