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参数资料
| 型号： | FDD6N50FTF |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 500V 5.5A DPAK |
| 产品目录绘图： | DPAK, TO-252(AA) |
| 标准包装： | 1 |
| 系列： | UniFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 500V |
| 电流 - 连续漏极(Id) @ 25° C： | 5.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.15 欧姆 @ 2.75A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 19.8nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 960pF @ 25V |
| 功率 - 最大： | 89W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 标准包装 |
| 其它名称： | FDD6N50FTFDKR |
November 2013
FDD6N50F
N-Channel UniFET TM FRFET ? MOSFET
500 V, 5.5 A, 1.15 Ω
Features
? R DS(on) = 950 m Ω (Typ.) @ V GS = 10 V, I D = 2.75 A
? Low Gate Charge (Typ. 15nC)
? Low C rss (Typ. 6.3pF)
? 100% Avalanche Tested
? Improved dv/dt Capability
? RoHS Compliant
Applications
? LCD/LED/PDP TV
? Lighting
? Uninterruptible Power Supply
? AC-DC Power Supply
Description
UniFET TM MOSFET is Fairchild Semiconductor ’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. The body diode’s reverse recovery perfor-
mance of UniFET FRFET ? MOSFET has been enhanced by
lifetime control. Its trr is less than 100nsec and the reverse dv/dt
immunity is 15V/ns while normal planar MOSFETs have over
200nsec and 4.5V/nsec respectively. Therefore, it can remove
additional component and improve system reliability in certain
applications in which the performance of MOSFET’s body diode
is significant. This device family is suitable for switching power
converter applications such as power factor correction (PFC),
flat panel display (FPD) TV power, ATX and electronic lamp bal-
lasts.
D
D
G
S
D-PAK
G
S
MOSFET Maximum Ratings T C = 25
o
C unless otherwise noted.
Symbol
V DSS
Drain to Source Voltage
Parameter
FDD6N50F
500
Unit
V
V GSS
I D
Gate to Source Voltage
Drain Current
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
±30
5.5
2.4
V
A
I DM
Drain Current
- Pulsed
(Note 1)
22
A
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25 o C)
- Derate Above 25 o C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
270
5.5
8.9
20
89
0.71
mJ
A
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +150
300
o C
o C
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDD6N50F
1.4
83
Unit
o C/W
?2012 Fairchild Semiconductor Corporation
FDD6N50F Rev. C1
1
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDD6N50FTM | 功能描述:MOSFET 500V N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDD6N50RTF | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDD6N50TF | 功能描述:MOSFET 500V N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDD6N50TF_WS | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDD6N50TM | 功能描述:MOSFET 30V/16V 9.5/12MO NCH SINGLE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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