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参数资料
| 型号： | FDD8424H |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET DUAL N/P-CH 40V TO252-4L |
| 产品目录绘图： | MOSFET TO-252-4L |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 9A，6.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 24 毫欧 @ 9A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 20nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1000pF @ 20V |
| 功率 - 最大： | 1.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-5，DPak（4 引线 + 接片），TO-252AD |
| 供应商设备封装： | TO-252-4L |
| 包装： | 标准包装 |
| 产品目录页面： | 1608 (CN2011-ZH PDF) |
| 其它名称： | FDD8424HDKR |
February 2013
FDD8424H
Dual N & P-Channel PowerTrench ? MOSFET
N-Channel: 40V, 20A, 24m : P-Channel: -40V, -20A, 54m :
Features
General Description
Q1: N-Channel
These dual N and P-Channel enhancement
mode Power
? Max r DS(on) = 24m : at V GS = 10V, I D = 9.0A
? Max r DS(on) = 30m : at V GS = 4.5V, I D = 7.0A
Q2: P-Channel
? Max r DS(on) = 54m : at V GS = -10V, I D = -6.5A
? Max r DS(on) = 70m : at V GS = -4.5V, I D = -5.6A
? Fast switching speed
? RoHS Compliant
MOSFETs are produced using Fairchild Semiconductor ’s
advanced PowerTrench- process that has been especially
tailored to minimize on-state resistance and yet maintain
superior switching performance.
Application
? Inverter
? H-Bridge
D1/D2
G2
S2
G1
S1
G1
D1
S1
G2
D2
S2
Dual DPAK 4L
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
N-Channel
P-Channel
Symbol
V DS
V GS
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
- Continuous (Package Limited)
Q1
40
±20
20
Q2
-40
±20
-20
Units
V
V
I D
- Continuous (Silicon Limited)
- Continuous
T C = 25°C
T A = 25°C
26
9.0
-20
-6.5
A
- Pulsed
55
-40
Power Dissipation for Single Operation
T C = 25°C
(Note 1)
30
35
P D
T A = 25°C (Note 1a)
T A = 25°C (Note 1b)
3.1
1.3
W
E AS
Single Pulse Avalanche Energy
(Note 3)
29
33
mJ
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R T JC
R T JC
Thermal Resistance, Junction to Case, Single Operation for Q1
Thermal Resistance, Junction to Case, Single Operation for Q2
(Note 1)
(Note 1)
4.1
3.5
°C/W
Package Marking and Ordering Information
Device Marking
FDD8424H
Device
FDD8424H
Package
TO-252-4L
Reel Size
13”
Tape Width
12mm
Quantity
2500 units
?2013 Fairchild Semiconductor Corporation
FDD8424H Rev.C1
1
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDD8424H_11 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N & P-Channel PowerTrench?? MOSFET N-Channel: 40V, 20A, 24m?? P-Channel: -40V, -20A, 54m?? |
| FDD8424H_F085 | 功能描述:MOSFET PT2 P-Channel and PT4 N-channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDD8424H_F085A | 功能描述:MOSFET Dual N&PCH PwrTrench +/- 40V,20A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDD8424H_F085A_13 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N & P-Channel PowerTrench?? MOSFET N-Channel: 40V, 20A, 24m?? P-Channel: -40V, -20A, 54m?? |
| FDD8426H | 功能描述:MOSFET Dual N & P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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