参数资料
型号: FDD8453LZ
厂商: Fairchild Semiconductor
文件页数: 1/7页
文件大小: 0K
描述: MOSFET N-CH 40V 16.4A DPAK
产品目录绘图: DPAK, TO-252(AA)
标准包装: 1
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 40V
电流 - 连续漏极(Id) @ 25° C: 16.4A
开态Rds(最大)@ Id, Vgs @ 25° C: 6.7 毫欧 @ 15A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 64nC @ 10V
输入电容 (Ciss) @ Vds: 3515pF @ 20V
功率 - 最大: 3.1W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: D-Pak
包装: 标准包装
产品目录页面: 1605 (CN2011-ZH PDF)
其它名称: FDD8453LZDKR
September 2007
FDD8453LZ
N-Channel PowerTrench ? MOSFET
40V, 50A, 6.7m ?
Features
Max r DS(on) = 6.7m ? at V GS = 10V, I D = 15A
Max r DS(on) = 8.7m ? at V GS = 4.5V, I D = 13A
HBM ESD protection level >7kV typical (Note 4)
RoHS Compliant
tm
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench ? process that has
been especially tailored to minimize the on-state resistance and
switching loss. G-S zener has been added to enhance ESD
voltage level.
Applications
Inverter
Synchronous Rectifier
D
D
G
D TO -2 52
S
-PA K
G
(TO -252)
S
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
Symbol
V DS
V GS
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
T C = 25°C
Ratings
40
±20
50
Units
V
V
I D
-Continuous (Silicon limited)
-Continuous
T C = 25°C
T A = 25°C
(Note 1a)
75
16.4
A
-Pulsed
100
E AS
Single Pulse Avalanche Energy
(Note 3)
253
mJ
P D
Power Dissipation
Power Dissipation
T C = 25°C
T A = 25°C
(Note 1a)
65
3.1
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
1.9
40
°C/W
Package Marking and Ordering Information
Device Marking
FDD8453LZ
Device
FDD8453LZ
Package
D-PAK (TO-252)
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
?2007 Fairchild Semiconductor Corporation
FDD8453LZ Rev.C
1
www.fairchildsemi.com
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