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| 型号： | FDD86113LZ |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 4.2A DPAK-3 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 104 毫欧 @ 4.2A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 6nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 285pF @ 50V |
| 功率 - 最大： | 3.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252-3 |
| 包装： | 标准包装 |
| 其它名称： | FDD86113LZFSDKR |
June 2013
FDD86113LZ
N-Channel Shielded Gate PowerTrench ? MOSFET
100 V, 5.5 A, 104 m Ω
Features
Shielded Gate MOSFET Technology
Max r DS(on) = 104 m Ω at V GS = 10 V, I D = 4.2 A
Max r DS(on) = 156 m Ω at V GS = 4.5 V, I D = 3.4 A
HBM ESD protection level > 6 kV typical (Note 4)
High performance trench technology for extremely low r DS(on)
High power and current handling capability in a widely used
surface mount package
General Description
This N-Channel logic Level MOSFETs are produced using
Fairchild Semiconductor‘s advanced PowerTrench ? process
that incorporates Shielded Gate technology. This process has
been optimized for the on-state resistance and yet maintain
superior switching performance. G-S zener has been added to
enhance ESD voltage level.
Application
DC-DC conversion
100% UIL Tested
RoHS Compliant
D
D
G
D T O -2 52
S
-P A K
G
(T O -252)
S
MOSFET Maximum Ratings T C = 25 °C unless otherwise noted
Symbol
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
100
±20
Units
V
V
Drain Current
-Continuous
T C = 25 °C
5.5
I D
-Continuous
T A = 25 °C
(Note 1a)
4.2
A
-Pulsed
15
E AS
Single Pulse Avalanche Energy
(Note 3)
12
mJ
P D
Power Dissipation
Power Dissipation
T C = 25 °C
T A = 25 °C
(Note 1a)
29
3.1
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1)
(Note 1a)
4.3
96
°C/W
Package Marking and Ordering Information
Device Marking
FDD86113LZ
Device
FDD86113LZ
Package
D-PAK(TO-252)
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
?2011 Fairchild Semiconductor Corporation
FDD86113LZ Rev. C1
1
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDD86250 | 功能描述:MOSFET 150V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDD86252 | 功能描述:MOSFET 150 N-CH PwrTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDD86326 | 功能描述:MOSFET 80V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDD8647L | 功能描述:MOSFET 40/20V Nch Power Trench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDD86540 | 功能描述:MOSFET 60V 50A 4.1ohm NCh PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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