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| 型号： | FDD86113LZ |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 4.2A DPAK-3 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 104 毫欧 @ 4.2A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 6nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 285pF @ 50V |
| 功率 - 最大： | 3.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252-3 |
| 包装： | 标准包装 |
| 其它名称： | FDD86113LZFSDKR |
Electrical Characteristics T J = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
Δ BV DSS
Δ T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = 250 μ A, V GS = 0 V
I D = 250 μ A, referenced to 25 °C
V DS = 80 V, V GS = 0 V
V GS = ±20 V, V DS = 0 V
100
72
1
±10
V
mV/°C
μ A
μ A
On Characteristics
V GS(th)
Δ V GS(th)
Δ T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = 250 μ A
I D = 250 μ A, referenced to 25 °C
1
1.5
-5
3
V
mV/°C
V GS = 10 V, I D = 4.2 A
87
104
r DS(on)
Static Drain to Source On Resistance
V GS = 4.5 V, I D = 3.4 A
116
156
m Ω
V GS = 10 V, I D = 4.2 A,T J = 125 °C
142
170
g FS
Forward Transconductance
V DS = 5 V, I D = 4.2 A
9
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 50 V, V GS = 0 V,
f = 1MHz
213
55
2.4
1.4
285
75
5
pF
pF
pF
Ω
Switching Characteristics
t d(on)
Turn-On Delay Time
3.6
10
ns
t r
t d(off)
t f
Q g(TOT)
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
V DD = 50 V, I D = 4.2 A,
V GS = 10 V, R GEN = 6 Ω
V GS = 0 V to 10 V
1.3
9.7
1.6
3.7
10
20
10
6
ns
ns
ns
nC
Q g(TOT)
Q gs
Q gd
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V GS = 0 V to 4.5 V V DD = 50 V,
I D = 4.2 A
1.9
0.6
0.7
3
nC
nC
Drain-Source Diode Characteristics
V SD
t rr
Q rr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = 4.2 A
V GS = 0 V, I S = 1.7 A
I F = 4.2 A, di/dt = 100 A/ μ s
(Note 2)
(Note 2)
0.88
0.80
31
20
1.3
1.2
49
33
V
ns
nC
NOTES:
1. R θ JA is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R θ JC is guaranteed by design while R θ CA is determined by
the user's board design.
a) 40 °C/W when mounted on a
1 in 2 pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μ s, Duty cycle < 2.0 %.
3. Starting T J = 25 °C, L = 1 mH, I AS = 5 A, V DD = 90 V, V GS = 10 V.
4. The diode connected between gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
b) 96 °C/W when mounted on a
minimum pad of 2 oz copper
?2011 Fairchild Semiconductor Corporation
FDD86113LZ Rev. C1
2
www.fairchildsemi.com
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