参数资料
型号: FDD8451
厂商: Fairchild Semiconductor
文件页数: 1/6页
文件大小: 0K
描述: MOSFET N-CH 40V 9A DPAK
产品目录绘图: DPAK, TO-252(AA)
标准包装: 1
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 40V
电流 - 连续漏极(Id) @ 25° C: 9A
开态Rds(最大)@ Id, Vgs @ 25° C: 24 毫欧 @ 9A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 20nC @ 10V
输入电容 (Ciss) @ Vds: 990pF @ 20V
功率 - 最大: 30W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: D-Pak
包装: 标准包装
产品目录页面: 1605 (CN2011-ZH PDF)
其它名称: FDD8451DKR
Ma y 200 9
FDD8451
N-Channel PowerTrench ? MOSFET
40V, 28A, 24m
tm
Features
General Description
Max r DS(on)
24m
at V GS = 10V, I D = 9A
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
Max r DS(on)
30m
at V GS = 4.5V, I D = 7A
either synchronous or conventional switching PWM
DF REE I
A
Low gate charge
Fast Switching
High performance trench technology for extremely low
r DS(on)
RoHS compliant
controllers. It has been optimized for low gate charge, fast
switching speed and extremely low r DS(on) .
Application
DC/DC converter
Backlight inverter
D
G
S
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
Symbol
V DS
V GS
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous @T C =25°C
Ratings
40
±20
28
Units
V
V
I D
-Continuous @T A =25°C
(Note 1a)
9
A
-Pulsed
78
E AS
P D
T J , T STG
Single Pulse Avalanche Energy
Power Dissipation
Operating and Storage Temperature
(Note 3 )
20
3 0
-55 to 150
mJ
W
° C
Thermal Characteristics
R
JC
Thermal Resistance, Junction to Case
4.1
°C/W
R
R
JA
JA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1a)
(Note 1b)
40
96
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDD8451
Device
FDD8451
Package
D-PAK(TO-252)
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
?200 9 Fairchild Semiconductor Corporation
FDD8451 Rev. B 2
1
www.fairchildsemi.com
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