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参数资料
| 型号： | FDD8451 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V 9A DPAK |
| 产品目录绘图： | DPAK, TO-252(AA) |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 24 毫欧 @ 9A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 20nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 990pF @ 20V |
| 功率 - 最大： | 30W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 标准包装 |
| 产品目录页面： | 1605 (CN2011-ZH PDF) |
| 其它名称： | FDD8451DKR |
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
BV DSS
T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = 250 A, V GS = 0V
I D = 250 A, referenced to
25°C
V DS = 32V, V GS = 0V
V GS = ±20V, V DS = 0V
40
33.5
1
±100
V
mV /° C
A
nA
On Characteristics
V GS(th)
V GS(th)
T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = 250 A
I D = 250 A, referenced to
25°C
1
2.1
-5.7
3
V
mV/°C
V GS = 10V, I D = 9A
19
24
r DS(on)
g FS
Drain to Source On Resistance
Forward Transcondductance
V GS = 4.5V, I D = 7A
V GS = 10V, I D = 9A
T J = 150°C
V DS = 5V, I D = 9A
23
32
29
30
41
m
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 20V, V GS = 0V,
f = 1MHz
f = 1MHz
780
112
72
1.1
990
150
110
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g
Q g
Q gs
Q gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 10V
Total Gate Charge at 5V
Gate to Source Gate Charge
Gate to Drain “Miller”Charge
V DD = 20V, I D = A
V GS = 10V, R GEN = 6
V DS = 20V, I D = 9A
V GS = 10V
7
3
19
2
16
8.6
2.5
3.7
14
10
34
10
20
11
ns
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics
V SD
Source to Drain Diode Forward Voltage V GS = 0V, I S = 9A
0.87
1.2
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
I F = 9A, di/dt = 100A/ s
I F = 9A, di/dt = 100A/ s
25
19
38
29
ns
nC
Notes :
1: R JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R JC is guaranteed by design while R JA is determined by the user’s board design.
a)
40 °C/W when mounted on a
1 in 2 pad of 2 oz copper
b)
96 °C/W when mounted on
a minimum pad
2: Pulse Test: Pulse Width < 30 0 s, Duty cycle < 2.0%.
3: Starting T J = 25 ° C , L = 0.1 mH , I AS = 20 A , V DD = 36 V , V GS = 10 V.
FDD8451 Rev. B 2
2
www.fairchildsemi.com
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