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参数资料
| 型号： | FDD6N50TM_WS |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 500V 6A DPAK |
| 产品目录绘图： | DPAK, TO-252(AA) |
| 标准包装： | 1 |
| 系列： | UniFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 500V |
| 电流 - 连续漏极(Id) @ 25° C： | 6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 900 毫欧 @ 3A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 16.6nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 940pF @ 25V |
| 功率 - 最大： | 89W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 标准包装 |
| 产品目录页面： | 1606 (CN2011-ZH PDF) |
| 其它名称： | FDD6N50TM_WSDKR |
November 2013
FDD6N50 / FDU6N50
N-Channel UniFET TM MOSFET
500 V, 6 A, 900 m Ω
Features
? R DS(on) = 900 m Ω (Max.) @ V GS = 10 V, I D = 3 A
? Low Gate Charge (Typ. 12.8 nC)
? Low C rss (Typ. 9 pF)
? 100% Avalanche Tested
? Improved dv/dt Capability
Applications
Description
UniFET TM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
? LCD/LED/PDP TV
? Lighting
? Uninterruptible Power Supply
? AC-DC Power Supply
D
D
G
S
D-PAK
G
D
S
I-PAK
G
Absolute Maximum Ratings
T C = 25 o C unless otherwise noted.
S
FDD6N50TM /
FDD6N50TM_WS /
Symbol
V DSS
Drain-Source Voltage
Parameter
FDU6N50TU
500
Unit
V
I D
Drain Current
- Continuous (T C = 25 ° C)
- Continuous (T C = 100 ° C)
6
3.8
A
A
I DM
V GSS
Drain Current
Gate-Source voltage
- Pulsed
(Note 1)
24
± 30
A
V
E AS
I AR
E AR
dv/dt
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
270
6
8.9
4.5
mJ
A
mJ
V/ns
P D
Power Dissipation
(T C = 25 ° C)
- Derate Above 25 ° C
89
0.71
W
W/ ° C
T J, T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for
5 Seconds
-55 to +150
300
° C
° C
Thermal Characteristics
FDD6N50TM /
FDD6N50TM_WS /
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FDU6N50TU
1.4
83
Unit
° C/W
?2006 Fairchild Semiconductor Corporation
FDD6N50 / FDU6N50 Rev. C1
1
www.fairchildsemi.com
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