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参数资料
| 型号： | FDD6N50TM_WS |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 500V 6A DPAK |
| 产品目录绘图： | DPAK, TO-252(AA) |
| 标准包装： | 1 |
| 系列： | UniFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 500V |
| 电流 - 连续漏极(Id) @ 25° C： | 6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 900 毫欧 @ 3A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 16.6nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 940pF @ 25V |
| 功率 - 最大： | 89W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 标准包装 |
| 产品目录页面： | 1606 (CN2011-ZH PDF) |
| 其它名称： | FDD6N50TM_WSDKR |
Package Marking and Ordering Information
Part Number
FDD6N50TM
FDD6N50TM_WS
FDU6N50TU
Top Mark
FDD6N50
FDD6N50S
FDU6N50
Package
DPAK
DPAK
IPAK
Packing Method
Tape and Reel
Tape and Reel
Tube
Reel Size
330 mm
330 mm
N/A
Tape Width
16 mm
16 mm
N/A
Quantity
2500 units
2500 units
75 units
Electrical Characteristics
T C = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Typ.
Max
Unit
Off Characteristics
BV DSS
Δ BV DSS
/ Δ T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V GS = 0 V, I D = 250 μ A
I D = 250 μ A, Referenced to 25 ° C
V DS = 500 V, V GS = 0 V
V DS = 400 V, T C = 125 ° C
V GS = 30 V, V DS = 0 V
V GS = -30 V, V DS = 0 V
500
--
--
--
--
--
--
0.5
--
--
--
--
--
--
1
10
100
-100
V
V/ ° C
μ A
μ A
nA
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V DS = V GS , I D = 250 μ A
V GS = 10 V, I D = 3 A
V DS = 40 V, I D = 3 A
3.0
--
--
--
0.76
2.5
5.0
0.9
--
V
Ω
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25 V, V GS = 0 V,
f = 1.0 MHz
--
--
--
720
95
9
940
190
13.5
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 250 V, I D = 6 A,
V GS = 10 V, R G = 25 Ω
V DS = 400 V, I D = 6 A,
V GS = 10 V
(Note 4)
(Note 4)
--
--
--
--
--
--
--
6
55
25
35
12.8
3.7
5.8
20
120
60
80
16.6
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
I SM
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
6
24
A
A
V SD
t rr
Q rr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = 6 A
V GS = 0 V, I S = 6 A,
dI F /dt =100 A/ μ s
--
--
--
--
275
1.7
1.4
--
--
V
ns
μ C
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. I AS = 6 A, V DD = 50 V, L=13.5 mH, R G = 25 Ω , starting T J = 25 ° C.
3. I SD ≤ 6 A, di/dt ≤ 200 A/ μ s, V DD ≤ BV DSS , starting T J = 25 ° C.
4. Essentially independent of operating temperature typical characteristics.
?2006 Fairchild Semiconductor Corporation
FDD6N50 / FDU6N50 Rev. C1
2
www.fairchildsemi.com
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