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| 型号： | FDD86102 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 8A DPAK |
| 产品目录绘图： | DPAK, TO-252(AA) |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 24 毫欧 @ 8A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 19nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1035pF @ 50V |
| 功率 - 最大： | 3.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 标准包装 |
| 产品目录页面： | 1606 (CN2011-ZH PDF) |
| 其它名称： | FDD86102DKR |
Electrical Characteristics T J = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
Δ BV DS S
Δ T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = 250 μ A, V GS = 0 V
I D = 250 μ A, referenced to 25 °C
V DS = 80 V, V GS = 0 V
V GS = ±20 V, V DS = 0 V
100
67
1
±100
V
mV/°C
μ A
nA
On Characteristics (Note 2)
V GS(th)
Δ V GS(th )
Δ T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = 250 μ A
I D = 250 μ A, referenced to 25 °C
2
3.1
-8.5
4
V
mV/°C
V GS = 10 V, I D = 8 A
19
24
r DS(on)
Static Drain to Source On Resistance
V GS = 6 V, I D = 6 A
26
38
m Ω
V GS = 10 V, I D = 8 A, T J = 125 °C
33
44
g FS
Forward Transconductance
V DS = 10 V, I D = 8 A
21
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 50 V, V GS = 0 V,
f = 1 MHz
780
180
15
0.4
1035
240
25
pF
pF
pF
Ω
Switching Characteristics
t d(on)
Turn-On Delay Time
7.6
15
ns
t r
t d(off)
t f
Q g
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
V DD = 50 V, I D = 8 A,
V GS = 10 V, R GEN = 6 Ω
V GS = 0 V to 10 V
3
13.4
2.9
13.4
10
24
10
19
ns
ns
ns
nC
Q g
Q gs
Total Gate Charge
Gate to Source Gate Charge
V GS = 0 V to 5 V
V DD = 50 V,
I D = 8 A
7.6
4.0
11
nC
nC
Q gd
Gate to Drain “Miller” Charge
3.7
nC
Drain-Source Diode Characteristics
V SD
t rr
Q rr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = 8 A
V GS = 0 V, I S = 2.6 A
I F = 8 A, di/dt = 100 A/ μ s
(Note 2)
(Note 2)
0.8
0.7
43
43
1.3
1.2
68
68
V
ns
nC
Notes :
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
R θ JC is guaranteed by design while R θ JA is determined by the user’s board design.
a. 40 °C/W when mounted on a
1 in 2 pad of 2 oz copper.
b. 96 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μ s, Duty cycle < 2.0%.
3. E AS 121 mJ is based on starting T J = 25 ° C, L = 3 mH, I AS = 9 A, V DD = 100 V, V GS = 10 V. 100% test at L = 0.1 mH, I AS = 30 A.
4. Pulsed Drain current is tested at 300 μ s with 2% duty cycle. For repetitive pulses, the pulse width is limited by the maximum junction temperature.
?2012 Fairchild Semiconductor Corporation
FDD86102 Rev.C7
2
www.fairchildsemi.com
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| FDD86102LZ | 功能描述:MOSFET 100V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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| FDD86113LZ | 功能描述:MOSFET 100/20V PT5 N-Chan PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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