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参数资料
| 型号： | FDD8647L |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V 14A DPAK |
| 产品目录绘图： | DPAK, TO-252(AA) |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 14A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 9 毫欧 @ 13A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 28nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1640pF @ 20V |
| 功率 - 最大： | 3.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 标准包装 |
| 产品目录页面： | 1605 (CN2011-ZH PDF) |
| 其它名称： | FDD8647LDKR |
Electrical Characteristics T J = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
? BV DSS
? T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = 250 μ A, V GS = 0 V
I D = 250 μ A, referenced to 25 °C
V DS = 32 V, V GS = 0 V
V GS = ±20 V, V DS = 0 V
40
31
1
±100
V
mV / °C
μ A
nA
On Characteristics
V GS(th)
? V GS(th)
? T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = 250 μ A
I D = 250 μ A, referenced to 25 °C
1.0
2.0
-6
3.0
V
mV/°C
V GS = 10 V, I D = 13 A
7.1
9.0
r DS(on)
Static Drain to Source On Resistance
V GS = 4.5 V, I D = 11 A
9.9
13.0
m ?
V GS = 10 V, I D = 13 A, T J = 125 °C
10.7
13.6
g FS
Forward Transconductance
V DS = 5 V, I D = 13 A
49
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 20 V, V GS = 0 V,
f = 1 MHz
1230
340
55
0.9
1640
455
80
pF
pF
pF
?
Switching Characteristics
t d(on)
Turn-On Delay Time
8
16
ns
t r
t d(off)
t f
Q g
Q g
Q gs
Q gd
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V DD = 20 V, I D = 13 A,
V GS = 10 V, R GEN = 6 ?
V GS = 0 V to 10 V
V GS = 0 V to 4.5 V V DD = 20 V,
I D = 13 A
3
19
2
20
10
3.8
3.1
10
34
10
28
14
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics
V SD
Source to Drain Diode Forward Voltage
V GS = 0 V, I S = 2.6 A
V GS = 0 V, I S = 13 A
(Note 2)
(Note 2)
0.75
0.84
1.2
1.3
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
I F = 13 A, di/dt = 100 A/ μ s
28
15
45
27
ns
nC
Notes :
1: R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
R θ JC is guaranteed by design while R θ JA is determined by the user’s board design.
a) 40 °C/W when mounted on a
1 in 2 pad of 2 oz copper
2: Pulse Test: Pulse Width < 30 0 μ s, Duty cycle < 2.0%.
3: Starting T J = 25 ° C , L = 0.3 mH, I AS = 15.0 A, V DD = 36 V, V GS = 10.0 V.
b) 96 °C/W when mounted on
a minimum pad
?2008 Fairchild Semiconductor Corporation
FDD8647L Rev . C
2
www.fairchildsemi.com
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