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参数资料
| 型号： | FDD8880 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 58A DPAK |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 58A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 9 毫欧 @ 35A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 31nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1260pF @ 15V |
| 功率 - 最大： | 55W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252-3 |
| 包装： | 标准包装 |
| 其它名称： | FDD8880DKR |
N
April 200 8
FDD8880
N-Channel PowerTrench ? MOSFET
30V, 58A, 9m ?
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r DS(ON) and fast switching speed.
Applications
tm
Features
? r DS(ON) = 9m ? , V GS = 10V, I D = 35A
? r DS(ON) = 12m ? , V GS = 4.5V, I D = 35A
? High performance trench technology for extremely low
r DS(ON)
? Low gate charge
? High power and current handling capability
? DC/DC converters
?
RoHS Compliant
D
D
G
G
D-PAK
S
TO-252
S
(TO-252)
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
Symbol
V DSS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
30
± 20
Units
V
V
Drain Current
Continuous (T C = 25 o C, V GS = 10V) (Note 1)
58
A
I D
E AS
P D
T J , T STG
Continuous (T C = 25 o C, V GS = 4.5V) (Note 1)
Continuous (T amb = 25 o C, V GS = 10V, with R θ JA = 52 o C/W)
Pulsed
Single Pulse Avalanche Energy (Note 2)
Power dissipation
Derate above 25 o C
Operating and Storage Temperature
51
13
Figure 4
53
55
0.37
-55 to 175
A
A
A
mJ
W
W/ o C
o C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
2.73
100
o
o
C/W
C/W
R θ JA
Thermal Resistance Junction to Ambient TO-252, 1in 2 copper pad area
52
o C/W
Package Marking and Ordering Information
Device Marking
FDD8880
Device
FDD8880
Package
TO-252AA
Reel Size
13”
Tape Width
12mm
Quantity
2500 units
?200 8 Fairchild Semiconductor Corporation
FDD8880 Rev. B 3
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDD8880_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET 30V, 58A, 9mヘ |
| FDD8880_F054 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDD8880_G | 制造商:Fairchild Semiconductor Corporation 功能描述:30V N-Channel PowerTrench? MOSFET |
| FDD8880_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDD8882 | 功能描述:MOSFET 30V N-Channel PowerTrench? MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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