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参数资料
| 型号： | FDFM2N111 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 4A 3X3 MLP |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 3,000 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 100 毫欧 @ 4A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 3.8nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 273pF @ 10V |
| 功率 - 最大： | 800mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-MLP，Power33 |
| 供应商设备封装： | MicroFET 3x3mm |
| 包装： | 带卷 (TR) |
August 2005
FDFM2N111
Integrated N-Channel PowerTrench ? MOSFET and Schottky Diode
General Description
FDFM2 N 111 combines the exceptional performance of
Fairchild's PowerTrench MOSFET technology with a very
low forward voltage drop Schottky barrier rectifier in a
MicroFET package.
Applications
Standard Buck Converter
Features
This device is designed specifically as a single package
solution for Standard Buck Converter. It features a fast
switching, low gate charge MOSFET with very low on-state
resistance.
4 A, 20 V
R DS(ON) = 100m ? @ V GS = 4.5 V
R DS(ON) = 150m ? @ V GS = 2.5 V
Low Profile - 0.8 mm maximun - in the new package
MicroFET 3x3 mm
PIN 1
A
S/C
G
A
1
6
A
C
D
S/C
G
2
3
5
4
S/C
D
A
S/C
D
TOP
BOTTOM
MLP 3x3
Absolute Maximum Ratings T A = 25°C unless otherwise noted
Symbol
V DSS
V GSS
Drain-Source Voltage
Gate-Source Voltage
Parameter
Ratings
20
± 12
Units
V
V
I D
V RRM
I O
P D
Drain Current -Continuous
-Pulsed
Schottky Repetitive Peak Reverse voltage
Schottky Average Forward Current
Power dissipation (Steady State)
Power dissipation (Steady State)
(Note 1a)
(Note 1a)
(Note 1a)
(Note 1b)
4
10
20
2
1.7
0.8
A
V
A
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
o
C
Thermal Characteristics
R θ JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
70
o
C/W
R θ JA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
150
o C/W
Package Marking and Ordering Information
Device Marking
2N111
Device
FDFM2N111
Reel Size
7inch
Tape Width
12mm
Quantity
3000 units
?2005 Fairchild Semiconductor Corporation
1
FDFM2N111 Rev. C 2 (W)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDFM2P110 | 功能描述:MOSFET DUAL Pwr MOSFET & SCHOTTKY DIODE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDFM2P110_0508 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode |
| FD-FM2S | 制造商:Panasonic Electric Works 功能描述:FIBER SENSORM6 DIF. W/ 2.5MM DIA. 90MM 制造商:Panasonic Electric Works 功能描述:THRU-BEAM TYPE FIBER |
| FD-FM2S4 | 制造商:Panasonic Electric Works 功能描述:THRU-BEAM TYPE FIBER |
| FDFM3112F897C S LJSH | 制造商:Intel 功能描述:Intel FDFM3112F897C S LJSH Ethernet Multi-Port Switches |
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