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参数资料
| 型号： | FDFMA2P853T |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 3A 6-MICROFET |
| 标准包装： | 3,000 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 120 毫欧 @ 3A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 6nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 435pF @ 10V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-MicroFET（2x2） |
| 包装： | 带卷 (TR) |
December 2008
FDFMA2P853T
Integrated P-Channel PowerTrench ? MOSFET and Schottky Diode
–20 V, –3.0 A, 120 m ?
tm
Features
MOSFET :
Max r DS(on) = 120 m ? at V GS = –4.5 V, I D = –3.0 A
Max r DS(on) = 160 m ? at V GS = –2.5 V, I D = –2.5 A
Max r DS(on) = 240 m ? at V GS = –1.8 V, I D = –1.0 A
Schottky:
V F < 0.46 V @ 500 mA
Low profile - 0.55 mm maximum - in the new package
MicroFET 2x2 Thin
RoHS Compliant
Free from halogenated compounds and antimony
oxides
Pin 1
General Description
This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other
ultra-portable applications. It features a MOSFET with low
on-state resistance and an independently connected low forward
voltage schottky diode for minimum conduction losses.
The MicroFET 2x2 Thin package offers exceptional thermal
performance for it’s physical size and is well suited to linear
mode applications.
A
NC
D
A 1
6 C
NC 2
D 3
5 G
4 S
MicroFET 2X2 Thin
C
G
S
MOSFET Maximum Ratings T A = 25 °C unless otherwise noted
Symbol
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
–20
±8
Units
V
V
I D
P D
Drain Current -Continuous
-Pulsed
Power Dissipation
Power Dissipation
T A = 25 °C
T A = 25 °C
T A = 25 °C
(Note 1a)
(Note 1a)
(Note 1b)
–3.0
–6
1.4
0.7
A
W
T J , T STG
V RRM
I O
Operating and Storage Junction Temperature Range
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
–55 to +150
30
1
° C
V
A
Thermal Characteristics
R θ JA
Thermal Resistance, Junction to Ambient
(Note 1a)
86
R θ JA
R θ JA
R θ JA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1b)
(Note 1c)
(Note 1d)
173
86
140
°C/W
Package Marking and Ordering Information
Device Marking
53
Device
FDFMA2P853T
Package
MicroFET 2x2 Thin
Reel Size
7 ’’
Tape Width
8 mm
Quantity
3000 units
?2008 Fairchild Semiconductor Corporation
FDFMA2P853T Rev.B1
1
www.fairchildsemi.com
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| FDFMA3N109_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Integrated N-Channel PowerTrench㈢ MOSFET and Schottky Diode |
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