- 您现在的位置：买卖IC网 > Datasheet目录418 > FDFMA2P857 (Fairchild Semiconductor)MOSFET P-CH 20V 3A MICROFET2X2 Datasheet资料下载
参数资料
| 型号： | FDFMA2P857 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 3A MICROFET2X2 |
| 产品目录绘图： | MicorFET 2x2, SC-75 Dual |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 120 毫欧 @ 3A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 6nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 435pF @ 10V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-MicroFET（2x2） |
| 包装： | 标准包装 |
| 产品目录页面： | 1609 (CN2011-ZH PDF) |
| 其它名称： | FDFMA2P857DKR |
March 200 8
FDFMA2P857
Integrated P-Channel PowerTrench ? MOSFET and Schottky Diode
– 20V, – 3.0A, 120m Ω
Features
MOSFET :
Max r DS(on) = 120m Ω at V GS = –4.5V, I D = –3.0A
Max r DS(on) = 160m Ω at V GS = –2.5V, I D = –2.5A
Max r DS(on) = 240m Ω at V GS = –1.8V, I D = –1.0A
Schottky:
V F < 0.54V @ 1A
Low profile - 0.8 mm maximum - in the new pack-
age MicroFET 2x2 mm
RoHS Compliant
Pin 1
General Description
This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other ultra-
portable applications. It features a MOSFET with low on-state
resistance and an independently connected low forward voltage
schottky diode for minimum conduction losses.
The MicroFET 2x2 package offers exceptional thermal
performance for it’s physical size and is well suited to linear
mode applications.
A
NC
D
A 1
NC 2
D 3
6 C
5 G
4 S
C
G
S
MicroFET 2x2
MOSFET Maximum Ratings T A = 25°C unless otherwise noted
Symbol
V DSS
V GSS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
20
±8
Units
V
V
I D
P D
T J , T STG
V RRM
I O
Drain Current -Continuous
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
(Note 1a)
(Note 1a)
(Note 1b)
–3
–6
1.4
0.7
–55 to +150
30
1
A
W
° C
V
A
Thermal Characteristics
R θ JA
Thermal Resistance, Junction to Ambient
(Note 1a)
86
R θ JA
R θ JA
R θ JA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1b)
(Note 1c)
(Note 1d)
173
86
140
°C/W
Package Marking and Ordering Information
Device Marking
.857
Device
FDFMA2P857
Package
MicroFET 2x2
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
?200 8 Fairchild Semiconductor Corporation
FDFMA2P857 Rev.B 1
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDFMA2P859T | MOSFET P-CH 20V 3A MICROFET |
| FDFMA3N109 | MOSFET N-CH 30V 2.9A MICRO2X2 |
| FDFMJ2P023Z | MOSFET P-CH 20V 2.9A 6MLP |
| FDFS2P106A | MOSFET P-CH 60V 3A 8-SOIC |
| FDFS2P753Z | MOSFET P-CH 30V 3A 8-SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDFMA2P857_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode .20V, .3.0A, 120mヘ |
| FDFMA2P859T | 功能描述:MOSFET PT2 Pch 20V/8V & Schottky Diode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDFMA3N109 | 功能描述:MOSFET PowerTrench MOSFET and Schottky Diode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDFMA3N109_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Integrated N-Channel PowerTrench㈢ MOSFET and Schottky Diode |
| FDFMA3P029Z | 功能描述:MOSFET PChan Sgl -30V -3.3A PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。