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参数资料
| 型号： | FDFMA2P857 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 3A MICROFET2X2 |
| 产品目录绘图： | MicorFET 2x2, SC-75 Dual |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 120 毫欧 @ 3A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 6nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 435pF @ 10V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-MicroFET（2x2） |
| 包装： | 标准包装 |
| 产品目录页面： | 1609 (CN2011-ZH PDF) |
| 其它名称： | FDFMA2P857DKR |
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
Δ BV DSS
Δ T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = –250 μ A, V GS = 0V
I D = –250 μ A, referenced to 25°C
V DS = –16V, V GS = 0V
V GS = ±8V, V DS = 0V
–20
–12
–1
±100
V
mV/° C
μ A
nA
On Characteristics
V GS(th)
Δ V GS(th)
Δ T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = –250 μ A
I D = –250 μ A, referenced to 25°C
–0.4
–0.7
2
–1.3
V
mV/°C
V GS = –4.5V, I D = –3.0A
90
120
r DS(on)
Static Drain to Source On Resistance
V GS = –2.5V, I D = –2.5A
V GS = –1.8V, I D = –1.0A
120
172
160
240
m Ω
V GS = –4.5V, I D = –3.0A, T J = 125°C
118
160
g FS
Forward Transconductance
V DS = –5V, I D = –3.0A
7
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = –10V, V GS = 0V,
f = 1.0MHz
435
80
45
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g(TOT)
Q gs
Q gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V DD = –10V, I D = –1A
V GS = –4.5V, R GEN = 6 Ω
V DS = –10V I D = –3.0A
V GS = –4.5V
9
11
15
6
4
0.8
0.9
18
19
27
12
6
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics
I S
Maximum Continuous Drain-Source Diode Forward Current
–1.1
A
V SD
Source to Drain Diode Forward Voltage
V GS = 0V, I S = –1.1A
(Note 2)
–0.8
–1.2
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
I F = –3.0A, di/dt = 100A/ μ s
17
6
ns
nC
Schottky Diode Characteristics
T J = 25°C
0.5
4.5
μ A
I R
Reverse Leakage
V R = 10V
T J = 85°C
0.05
1.0
mA
T J = 125°C
T J = 25°C
0.6
1.1
8.4
8.0
mA
μ A
I R
Reverse Leakage
V R = 20V
T J = 85°C
0.09
1.6
mA
T J = 125°C
T J = 25°C
0.9
0.37
10
0.40
mA
V
V F
Forward Voltage
I F = 100mA
T J = 85°C
0.29
0.35
V
T J = 125°C
T J = 25°C
0.23
0.5
0.29
0.54
V
V
V F
Forward Voltage
I F = 1A
T J = 85°C
0.46
0.51
V
T J = 125°C
0.43
0.48
V
FDFMA2P857 Rev.B 1
2
www.fairchildsemi.com
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